APT38N60BC6
APT38N60SC6
600V
COOLMOS
38A 0.099Ω
Super Junction MOSFET
Power Semiconductors
TO
• Ultra Low RDS(ON)
-2
47
D3PAK
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• Extreme dv/dt Rated
D
• Popular TO-247 or Surface Mount D3 package.
G
S
All Ratings per die: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VDSS
ID
Parameter
APT38N60B_SC6
UNIT
Drain-Source Voltage
600
Volts
Continuous Drain Current @ TC = 25°C
38
Continuous Drain Current @ TC = 100°C
24
1
Amps
112
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±20
Volts
PD
Total Power Dissipation @ TC = 25°C
278
Watts
TJ,TSTG
TL
dv/
dt
Operating and Storage Junction Temperature Range
-55 to 150
°C
Lead Temperature: 0.063" from Case for 10 Sec.
260
Drain-Source Voltage slope (VDS = 480V, ID = 38A, TJ = 125°C)
15
V/ns
6.6
Amps
2
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
2
1.2
( Id = 6.6A, Vdd = 50V )
mJ
796
( Id = 6.6A, Vdd = 50V )
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
BV(DSS)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
MIN
3
TYP
MAX
600
Volts
0.099
(VGS = 10V, ID = 18A)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
100
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.2mA)
2.5
UNIT
3
Ohms
μA
±100
nA
3.5
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com
050-7207 Rev C 1-2011
Symbol
DYNAMIC CHARACTERISTICS
APT38N60B_SC6
Symbol Characteristic
Test Conditions
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
2428
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
5
18
nC
58
14
29
ns
118
69
710
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
ID = 38A, RG = 4.3Ω
5
pF
112
INDUCTIVE SWITCHING
VGS = 15V
VDD = 400V
ID = 38A @ 25°C
RG = 4.3Ω
Eon
UNIT
261
VGS = 10V
VDD = 300V
ID = 38A @ 25°C
Fall Time
MAX
2826
4
Turn-off Delay Time
tf
TYP
VGS = 0V
VDS = 25V
f = 1 MHz
Rise Time
td(off)
MIN
550
μJ
1100
INDUCTIVE SWITCHING @ 125°C
VDD = 400V, VGS = 15V
ID = 38A, RG = 4.3Ω
625
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
IS
Continuous Source Current (Body Diode)
33
ISM
Pulsed Source Current
112
VSD
Diode Forward Voltage
1
(Body Diode)
3
(VGS = 0V, IS = -38A)
UNIT
Amps
1.3
Volts
8
V/ns
/dt
Peak Diode Recovery /dt
t rr
Reverse Recovery Time
(IS = -38A, di/dt = 100A/μs)
Tj = 25°C
667
ns
Q rr
Reverse Recovery Charge
(IS = -38A, di/dt = 100A/μs)
Tj = 25°C
18
μC
IRRM
Peak Recovery Current
(IS = -38A, di/dt = 100A/μs)
Tj = 25°C
49
Amps
dv
dv
6
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
MAX
UNIT
0.45
°C/W
40
1 Repetitive Rating: Pulse width limited by maximum junction temperature
4 See MIL-STD-750 Method 3471
2 Repetitive avalanche causes additional power losses that can be calculated as 5 Eon includes diode reverse recovery.
PAV = EAR*f . Pulse width tp limited by Tj max.
6 Maximum 125°C diode commutation speed = di/dt 600A/μs
3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
D = 0.9
0.4
0.7
0.3
0.5
Note:
0.2
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
050-7207 Rev C 1-2011
0.5
0.3
t1
t2
0.1
t
0.1
SINGLE PULSE
0.05
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0
10-5
10-4
10-2
10-3
0.1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1
APT38N60B_SC6
Typical Performance Curves
100
60
10 &15V
50
7V
60
6.5V
6V
40
5.5V
20
5V
ID, DRAIN CURRENT (A)
80
40
30
20
TJ= 25°C
10
4.5V
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 2, Low Voltage Output Characteristics
3.00
0
2.50
GS
= 10V @ 19A
35
2.00
VGS = 10V
1.50
VGS = 20V
1.00
0.50
0
0
25
20
15
10
40
60
80
100
120
ID, DRAIN CURRENT (A)
FIGURE 4, RDS(ON) vs Drain Current
0
20
.15
1.10
1.05
.00
.95
0.90
0.85
50
75
100
125
150
2.5
2.0
1.5
1.0
0.5
0
-50
0
50
100
150
TJ, Junction Temperature (°C)
FIGURE 6, Breakdown Voltage vs Temperature
1.2
25
TC, CASE TEMPERATURE (C°)
FIGURE 5, Maximum Drain Current vs Case Temperature
3.0
RDS(ON), DRAIN-TO-SOURCE ON
RESISTANCE (NORMALIZED)
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
30
5
.20
-50
0
50
100
150
TJ, JUNCTION TEMPERATURE (C°)
FIGURE 7, On-Resistance vs Temperature
800
1.1
100
ID, DRAIN CURRENT (A)
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
1 2
3 4
5 6 7
8 9 10
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 3, Transfer Characteristics
40
NORMALIZED TO
V
ID, DRAIN CURRENT (A)
RDS(on), DRAIN-TO-SOURCE ON RESISTANCE
0
TJ= -55°C
TJ= 125°C
1.0
0.9
0.8
0.7
10
Rds(on)
100µs
1ms
10µs
1
10ms
100ms
0.1
- 50
0
50
100
150
TC, Case Temperature (°C)
FIGURE 8, Threshold Voltage vs Temperature
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 9, Maximum Safe Operating Area
050-7207 Rev C 1-2011
IC, DRAIN CURRENT (A)
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
Typical Performance Curves
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10,000
C, CAPACITANCE (pF)
Ciss
1000
Coss
100
Crss
10
1
10
VDS= 120V
8
VDS= 300V
VDS= 480V
6
4
2
0
0
20
40
60
80
100
120
140
100
160
140
TJ= +150°C
TJ = =25°C
10
td(off)
120
V
DD
100
R
G
= 400V
= 4.3 Ω
T = 125°C
J
L = 100μH
80
60
40
td(on)
20
0
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 12, Source-Drain Diode Forward Voltage
00
V
DD
G
20
30
40
50
60
ID (A)
FIGURE 13, Delay Times vs Current
V
= 4.3Ω
DD
R
T = 125°C
J
L = 100μH
80
10
2000
= 400V
tf
SWITCHING ENERGY (μJ)
R
tr, and tf (ns)
D
200
1
60
40
tr
20
G
= 400V
= 4.3Ω
Eoff
T = 125°C
1600
J
L = 100μH
EON includes
diode reverse recovery.
1200
Eon
800
400
0
0
10
40
50
60
ID (A)
FIGURE 14 , Rise and Fall Times vs Current
2500
20
V
DD
30
= 400V
I = 38A
D
2000
SWITCHING ENERGY (uJ)
I = 38A
12
Qg, TOTAL GATE CHARGE (nC)
FIGURE 11, Gate Charges vs Gate-To-Source Voltage
180
td(on) and td(off) (ns)
IDR, REVERSE DRAIN CURRENT (A)
0
100
200
300
400
500
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 10, Capacitance vs Drain-To-Source Voltage
050-7207 Rev C 1-2011
APT38N60B_SC6
14
100,000
Eoff
T = 125°C
J
L = 100μH
EON includes
diode reverse recovery.
1500
1000
Eon
500
0
0
10
20
30
40
50
60
RG, GATE RESISTANCE (Ohms)
FIGURE 16, Switching Energy vs Gate Resistance
0
10
20
30
40
50
60
ID (A)
FIGURE 15, Switching Energy vs Current
APT38N60B_SC6
Typical Performance Curves
Gate Voltage
90%
10%
td(on)
90%
tr
5%
TJ = 125°C
tf
Collector Current
Collector Voltage
10%
5%
10%
Gate Voltage
td(off)
TJ = 125°C
0
Collector Current
Collector Voltage
Switching Energy
Switching Energy
Figure 18, Turn-off Switching Waveforms and Definitions
Figure 17, Turn-on Switching Waveforms and Definitions
APT30DQ60
APT30DF60
IC
V DD
V CE
G
D.U.T.
Figure
19,20,
Inductive
Switching
Test
Circuit
Figure
Inductive
Switching
Test
Circuit
3
D PAK Package Outline
TO-247 (B) Package Outline
15.49 (.610)
16.26 (.640)
Drain
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
e3 100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
13.41 (.528)
13.51(.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
050-7207 Rev C 1-2011
0.46 (.018)
0.56 (.022) {3 Plcs}