600V
94A
APT94N60L2C3
APT94N60L2C3G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Super Junction MOSFET
• Ultra Low RDS(ON)
TO-264
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• Extreme dv/dt Rated
D
• Dual die (parallel)
G
• Popular T-MAX Package
S
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
All Ratings per die: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VDSS
ID
Parameter
APT94N60L2C3(G)
UNIT
Drain-Source Voltage
600
Volts
Continuous Drain Current @ TC = 25°C
94
1
Amps
282
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±20
Gate-Source Voltage Transient
±30
Total Power Dissipation @ TC = 25°C
833
Watts
Linear Derating Factor
6.67
W/°C
VGSM
PD
TJ,TSTG
TL
dv
/dt
Operating and Storage Junction Temperature Range
Volts
-55 to 150
°C
Lead Temperature: 0.063" from Case for 10 Sec.
300
Drain-Source Voltage slope (VDS = 480V, ID = 94A, TJ = 125°C)
50
V/ns
Amps
IAR
Repetitive Avalanche Current
7
20
EAR
Repetitive Avalanche Energy
7
1
EAS
Single Pulse Avalanche Energy
mJ
1800
4
STATIC ELECTRICAL CHARACTERISTICS
BV(DSS)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 500μA)
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
MIN
2
TYP
MAX
600
(VGS = 10V, ID = 60A)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
UNIT
Volts
0.03
0.035
1.0
50
Ohms
μA
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
500
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±200
nA
3.9
Volts
Gate Threshold Voltage (VDS = VGS, ID = 5.4mA)
2.10
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com
3-2012
Characteristic / Test Conditions
050-7148 Rev E
Symbol
APT94N60L2C3(G)
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge 5
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
4400
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
505
pF
640
48
nC
240
18
27
110
165
8
12
ns
2040
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
ID = 94A, RG = 5Ω
6
UNIT
290
INDUCTIVE SWITCHING
VGS = 13V
VDD = 380V
ID = 94A @ 125°C
RG = 0.9Ω
Fall Time
MAX
13600
VGS = 10V
VDD = 300V
ID = 94A @ 25°C
Turn-off Delay Time
tf
TYP
VGS = 0V
VDS = 25V
f = 1 MHz
Rise Time
td(off)
MIN
3515
μJ
2920
INDUCTIVE SWITCHING @ 125°C
VDD = 400V, VGS = 15V
ID =94A, RG = 5Ω
3970
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
IS
Continuous Source Current (Body Diode)
94
ISM
Pulsed Source Current
282
VSD
Diode Forward Voltage
2
(Body Diode)
4
(VGS = 0V, IS = -94A)
1
UNIT
Amps
1.2
Volts
6
V/ns
/dt
Peak Diode Recovery /dt
t rr
Reverse Recovery Time
(IS = -94A, di/dt = 100A/μs)
861
ns
Q rr
Reverse Recovery Charge
(IS = -94A, di/dt = 100A/μs)
46
μC
dv
dv
7
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
MAX
UNIT
0.15
°C/W
62
1 Continuous current limited by package lead temperature.
4 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
2 Repetitive Rating: Pulse width limited by maximum junction temperature
5 See MIL-STD-750 Method 3471
3 Repetitive avalanche causes additional power losses that can be calculated as 6 Eon includes diode reverse recovery.
PAV = EAR*f . Pulse width tp limited by Tj max.
7 Maximum 125°C diode commutation speed = di/dt 600A/μs
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
D = 0.9
0.14
0.12
0.7
0.10
0.5
0.08
Note:
0.06
P DM
ZθJC, THERMAL IMPEDANCE (°C/W)
050-7148 Rev E
3-2012
0.16
0.3
0.04
t1
t2
t
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
0.1
0.02
SINGLE PULSE
0.05
0
10-5
10-4
10-3
10-2
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.1
APT94N60L2C3(G)
Typical Performance Curves
250
10 &15V
160
6.5V
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
140
6V
150
5.5V
100
5V
50
120
ID, DRAIN CURRENT (A)
100
80
60
40
TJ= 25°C
4.5V
20
4V
0
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 2, Low Voltage Output Characteristics
1.4
GS
ID, DRAIN CURRENT (A)
VGS = 10V
IDR, REVERSE
VGS = 20V
1
3
4
5
6
7
8
80
70
60
50
40
30
20
0.9
10
0.8
0
40
80
120
160
25
RDS(ON), DRAIN-TO-SOURCE ON
RESISTANCE (NORMALIZED)
1. 1
.05
1
.95
-50
0
50
100
50
75
100
125
150
TC, CASE TEMPERATURE (C°)
FIGURE 5, Maximum Drain Current vs Case Temperature
3.0
.15
0.
0
200
ID, DRAIN CURRENT (A)
FIGURE 4, RDS(ON) vs Drain Current
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
2
90
= 10V @ 47A
1.2
2.5
2.0
1.5
1
0.5
0
150
-50
TJ, Junction Temperature (°C)
FIGURE 6, Breakdown Voltage vs Temperature
0
50
100
150
TJ, JUNCTION TEMPERATURE (C°)
FIGURE 7, On-Resistance vs Temperature
800
1.2
1.1
ID, DRAIN CURRENT (A)
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
1
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 3, Transfer Characteristics
1.3
1.1
0
100
NORMALIZED TO
V
TJ= -55°C
TJ= 125°C
100
1
0.9
0.8
0.7
0.6
10μs
100μs
1ms
10
10ms
100ms
DC line
1
-50
0
50
100
150
TC, Case Temperature (°C)
FIGURE 8, Threshold Voltage vs Temperature
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 9, Maximum Safe Operating Area
050-8069 Rev E 3-2012
IC, DRAIN CURRENT (A)
200
APT94N60L2C3(G)
Typical Performance Curves
12
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
60,000
Ciss
C, CAPACITANCE (pF)
10,000
1,000
Coss
Crss
100
10
0
100
200
300
400
500
600
td(on) and td(off) (ns)
IDR, REVERSE DRAIN CURRENT (A)
VDS= 130V
8
VDS= 325V
TJ = =25°C
10
4
2
0
td(off)
500
V
DD
400
R
G
= 400V
= 4.3 Ω
T = 125°C
J
L = 100μH
300
200
100
0
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 12, Source-Drain Diode Forward Voltage
DD
50
G
DD
R
T = 125°C
J
L = 100μH
tf
50
00
tr
50
80
120
160
10000
G
= 400V
= 4.3Ω
T = 125°C
J
Eoff
L = 100μH
EON includes
8000
diode reverse recovery.
6000
4000
Eon
2000
0
40
80
120
160
ID (A)
FIGURE 14 , Rise and Fall Times vs Current
18000
V
DD
= 400V
16000
I = 94A
14000
T = 125°C
J
L = 100μH
D
Eoff
EON includes
12000
diode reverse recovery.
10000
8000
6000
Eon
4000
2000
0
40
V
= 4.3Ω
00
0
0
12000
= 400V
SWITCHING ENERGY (μJ)
R
td(on)
ID (A)
FIGURE 13, Delay Times vs Current
00
V
VDS= 520V
6
600
TJ= +150°C
1
tr, and tf (ns)
10
200
400
600
800
Qg, TOTAL GATE CHARGE (nC)
FIGURE 11, Gate Charges vs Gate-To-Source Voltage
700
100
SWITCHING ENERGY (uJ)
D
0
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 10, Capacitance vs Drain-To-Source Voltage
050-8069 Rev E 3-2012
I = 94A
0
10
20
30
40
50
RG, GATE RESISTANCE (Ohms)
FIGURE 16, Switching Energy vs Gate Resistance
0
0
25
50
75
100
125 150
ID (A)
FIGURE 15, Switching Energy vs Current
APT94N60L2C3(G)
Typical Performance Curves
Gate Voltage
10%
T
90%
Gate Voltage
TJ = 125 C
TJ = 125 C
td(on)
td(off)
tr
Collector Current
Collector Current
tf
90%
90%
5%
5%
10%
Collector Voltage
0
10%
Collector Voltage
Switching Energy
Switching Energy
Figure 18, Turn-off Switching Waveforms and Definitions
Figure 17, Turn-on Switching Waveforms and Definitions
75DQ60
APT30DF60
IC
V CE
G
D.U.T.
Figure
19,20,
Inductive
Switching
Test
Circuit
Figure
Inductive
Switching
Test
Circuit
TO-264 (L) Package Outline
e3 100% Sn Plated
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
Drai n
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
050-8069 Rev E 3-2012
V DD