Single Phase Rectifier Bridge PSB 35 IdAVM VRRM = 35 A = 800-1800 V Preliminary Data Sheet VRSM (V) 800 1200 1400 1600 1800 VRRM (V) 800 1200 1400 1600 1800 Symbol IdAVM IFSM ∫ i dt 2 TVJ TVJM Tstg VISOL Type PSB PSB PSB PSB PSB + 35/08 35/12 35/14 35/16 35/18 ~ ~ - Test Conditions TC = 85 °C, (per module) TVJ = 45 °C Maximum Ratings 35 A t = 10 ms (50 Hz), sine 400 A VR = 0 t = 8.3 ms (60 Hz), sine 440 A TVJ = TVJM t = 10 ms (50 Hz), sine 360 A VR = 0 t = 8.3 ms (60 Hz), sine 400 A TVJ = 45 °C t = 10 ms (50 Hz), sine 800 A²s VR = 0 t = 8.3 ms (60 Hz), sine 810 A²s TVJ = TVJM t = 10 ms (50 Hz), sine 650 A²s VR = 0 t = 8.3 ms (60 Hz), sine 670 A²s -40... + 150 150 °C °C -40... + 150 °C 50/60 Hz, RMS t = 1 min 2500 V∼ IISOL ≤ 1 mA 3000 Features • • • • • • Package with screw terminals Isolation voltage 3000 V∼ Planar glass passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E 148688 Applications • • • • Supplies for DC power equipment Input rectifier for PWM inverter Battery DC power supplies Field supply for DC motors Advantages Md Mounting torque (M4) 1.5 Nm • • • Weight Terminal connection torque (M4) typ. 1.5 105 Nm g Package style and outline t=1s V∼ Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability Dimensions in mm (1mm = 0.0394“) Symbol Test Conditions IR VR = VRRM, TVJ = 25°C VF VTO rT RthJC RthJK ds dA a Characteristic Value ≤ 0.3 mA VR = VRRM, TVJ = TVJM ≤ 5 mA IF = 150 A, ≤ 2.2 V 0.85 V TVJ = 25 °C For power-loss calculations only 12 mΩ 2.8 0.7 3.4 K/W K/W K/W per module 0.85 K/W Creeping distance on surface Creeping distance in air Max. allowable acceleration 18.6 18.6 50 mm mm m/s² per diode; DC per module per diode; DC Data according to IEC 60747 refer to a single diode unless otherwise stated POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 2002 POWERSEM reserves the right to change limits, test conditions and dimensions 200 [A] I F(OV) -----I FSM 1:TVJ= 150°C 10 TVJ=45°C 2:TVJ= 25°C 3 IFSM (A) 1.6 2 As TVJ=150°C 400 360 150 TVJ=45°C 1.4 TVJ=150°C 1.2 100 1 0 V RRM 50 0.8 IF 0.6 1/2 V RRM 1 0 1.0 1 V RRM 2 1.5 2.0 VF[V] 2.5 10 0.4 3.0 0 10 Fig. 1 Forward current versus 1 10 2 10 t[ms] 3 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration voltage drop per diode 50 [W] 80 TC 55 PSB 35 0.29 0.01 60 = RTHCA [K/W] 65 70 75 0.57 1.12 95 100 105 2.23 DC sin.180° rec.120° rec.60° rec.30° 20 PVTOT 0 10 IFAVM 30 [A] 110 115 120 125 130 135 5.57 140 145 °C 150 0 1 2 4 t [ms] Tamb 50 100 [K] 6 10 Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor) 40 DC sin.180° [A] rec.120° rec.60° 30 rec.30° 80 85 90 60 40 2 20 10 I dAV 0 50 100 150 200 T (°C) C 150 Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature 5 K/W 4 Z thJC 3 Z thJK 2 1 Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 2002 POWERSEM reserves the right to change limits, test conditions and dimensions