Three Phase Rectifier Bridges PSD 55 IdAVM VRRM = 58 A = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 55/08 PSD 55/12 PSD 55/14 PSD 55/16 PSD 55/18 ~ ~ ~ Symbol Test Conditions IdAVM IFSM TC = 85°C, module TVJ = 45°C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine 58 750 820 A A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 670 740 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2800 2820 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2250 2300 A2 s A2 s -40 ... + 150 150 -40 ... + 150 °C °C °C 2500 3000 V∼ V∼ 5 3 205 Nm Nm g ∫ i2 dt TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL ≤ 1 mA Maximum Ratings t = 1 min t=1s Mounting torque Terminal connection torque typ. (M5) (M5) Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 148688 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394“) Symbol Test Conditions Characteristic Value IR VR = VRRM VR = VRRM ≤ ≤ 0.3 10.0 mA mA VF VTO rT RthJC IF = 150 A TVJ = 25°C For power-loss calculations only TVJ = TVJM ≤ 1.6 0.85 8 V V mΩ per diode; DC current per module 2.7 0.45 K/W K/W RthJK per diode; DC current per module 3.06 0.51 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 7.8 7.8 50 mm mm m/s2 TVJ = 25°C TVJ = TVJM POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions PSD 55 IF(OV) -----IFSM 60 IFSM (A) TVJ=45°C TVJ=150°C A T=150°C 50 1.6 40 1.4 30 1.2 20 1 4 10 2 As 750 670 TVJ=45°C 10 3 TVJ=150°C 0 VRRM 10 0.8 T=25°C 1/2 VRRM IF 0.6 0 VF 1 V 1 VRRM 10 1.5 0.4 0 1 10 Fig. 1 Forward current versus voltage drop per diode 200 [W] 10 2 3 t[ms] 10 2 2 1 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 4 t [ms] 6 10 Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor) 60 TC 65 PSD 55 0.17 0.05 175 = RTHCA [K/W] 0.3 70 70 75 DC sin.180° [A] 80 150 rec.120° rec.60° 85 125 90 0.55 50 rec.30° 95 100 100 105 110 1.05 75 120 DC sin.180° rec.120° rec.60° rec.30° 50 25 PVTOT 0 10 IFAVM 30 30 115 125 130 2.55 135 140 145 °C 150 0 50 [A] Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 10 IdAV 0 50 100 150 200 T (°C) C Fig.5 Maximum forward current at case temperature 4 K/W Z thJK 3 ZthJC 2 1 Zth 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions