Three Phase Rectifier Bridges PSD 125 IdAVM VRRM = 166 A = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 125/08 PSD 125/12 PSD 125/14 PSD 125/16 PSD 125/18 ~ ~ ~ Symbol Test Conditions IdAVM IFSM TC = 85°C, module TVJ = 45°C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine 166 1800 1950 A A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1600 1800 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 16200 16000 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 12800 13600 A2 s A2 s -40 ... + 150 150 -40 ... + 150 °C °C °C 2500 3000 V∼ V∼ 5 5 240 Nm Nm g ∫ i2 dt TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL ≤ 1 mA Maximum Ratings t = 1 min t=1s Mounting torque Terminal connection torque typ. (M5) (M5) Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 148688 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394“) Symbol Test Conditions Characteristic Value IR VR = VRRM VR = VRRM ≤ ≤ 0.3 8.0 mA mA VF VTO rT RthJC IF = 150 A TVJ = 25°C For power-loss calculations only TVJ = TVJM ≤ 1.3 0.8 3 V V mΩ per diode; DC current per module 0.83 0.138 K/W K/W RthJK per diode; DC current per module 1.13 0.188 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 14 14 50 mm mm m/s2 TVJ = 25°C TVJ = TVJM POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions PSD 125 10 IF(OV) -----IFSM 200 1.6 160 2 As IFSM (A) TVJ=45°C TVJ=150°C A 1800 5 1600 1.4 T=150°C 120 1.2 10 TVJ=45°C 4 TVJ=150°C 1 80 0 VRRM 0.8 1/2 VRRM 40 T=25°C IF 0.6 1 VRRM 10 0 VF 1 0 1.5 V 600 [W] 1 10 Fig. 1 Forward current versus voltage drop per diode 3 2 1 0.4 10 2 3 t[ms] 10 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 4 t [ms] 6 10 Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor) 65 TC 70 PSD 125 0.07 0.03 500 = RTHCA [K/W] 75 80 0.11 200 DC [A] sin.180° 85 90 400 95 0.2 rec.120° rec.60° 150 rec.30° 100 105 300 110 100 115 0.36 120 200 DC sin.180° rec.120° rec.60° rec.30° 100 PVTOT 0 125 130 0.86 135 140 IdAV 145 0 °C 150 25 75 IFAVM 125 175 0 [A] Tamb 50 100 [K] 50 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 50 100 150 200 TC(°C) Fig.5 Maximum forward current at case temperature K/W Z thJK 1.2 1 Z thJC 0.8 0.6 0.4 0.2 Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions