POWERSEM PSD25

Three Phase
Rectifier Bridges
PSD 25
IdAVM
VRRM
= 25 A
= 800-1800 V
Preliminary Data Sheet
VRSM
V
800
1200
1400
1600
1800
VRRM
V
800
1200
1400
1600
1800
Type
PSD 25/08
PSD 25/12
PSD 25/14
PSD 25/16
PSD 25/18
~
~
~
Symbol
Test Conditions
IdAVM
IFSM
TC = 63°C, module
TVJ = 45°C
t = 10 ms (50 Hz), sine
VR = 0
t = 8.3 ms (60 Hz), sine
25
380
400
A
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
360
400
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
725
750
A2 s
A2 s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
650
650
A2 s
A2 s
-40 ... + 150
150
-40 ... + 150
°C
°C
°C
2500
3000
V∼
V∼
2
22
Nm
g
∫ i2 dt
TVJ
TVJM
Tstg
VISOL
Md
Weight
50/60 HZ, RMS
IISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque
typ.
(M5)
Maximum Ratings
Features
• Package with ¼ “ fast-on
•
•
•
•
•
terminals
Isolation voltage 3000 V∼
Planar glasspassivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
UL registered, E 148688
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with one screw
• Space and weight savings
• Improved temperature and power
cycling capability
Package, style and outline
Symbol
Test Conditions
Characteristic Value
IR
VR = VRRM
VR = VRRM
≤
≤
0.3
5.0
mA
mA
VF
VTO
rT
RthJC
IF = 150 A
TVJ = 25°C
For power-loss calculations only
TVJ = TVJM
≤
2.2
0.85
12
V
V
mΩ
per diode; DC current
per module
9.3
1.55
K/W
K/W
RthJK
per diode; DC current
per module
10.2
1.7
K/W
K/W
dS
dA
a
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
12.7
9.4
50
mm
mm
m/s2
TVJ = 25°C
TVJ = TVJM
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
Dimensions in mm (1mm = 0.0394“)
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
PSD 25
10
IF(OV)
-----IFSM
30
IFSM (A)
TVJ=45°C
TVJ=150°C
A
25
T=150°C
1.6
20
1.4
15
1.2
10
1
380
3
2
As
340
TVJ=45°C
TVJ=150°C
0 VRRM
0.8
5
1/2 VRRM
T=25°C
IF
0
VF
1
0.6
V
1 VRRM
10
1.5
0.4
0
1
10
Fig. 1 Forward current versus
voltage drop per diode
60
[W]
10
2
2
1
2
3
t[ms] 10
10
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
4
t [ms]
6
10
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
55
TC
60
PSD 25N
0.53 0.12
50
65
= RTHCA [K/W]
70
0.95
30
DC
[A]
sin.180°
75
rec.120°
80
85
40
90
1.78
rec.60°
rec.30°
20
95
100
30
105
110
3.45
20
10
PVTOT
0
IFAVM
20
115
120
DC
sin.180°
rec.120°
rec.60°
rec.30°
10
125
130
8.45
135
140
145
°C
150
[A]
0
Tamb
50
100
[K]
150
Fig. 4 Power dissipation versus direct output current and ambient
temperature
IdAV
0
50
100
150
200
T (°C)
C
Fig.5 Maximum forward current
at case temperature
12
Z thJK
Z thJC
K/W
10
8
6
4
2
Z th
0.01
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions