Three Phase Rectifier Bridges PSD 25 IdAVM VRRM = 25 A = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 25/08 PSD 25/12 PSD 25/14 PSD 25/16 PSD 25/18 ~ ~ ~ Symbol Test Conditions IdAVM IFSM TC = 63°C, module TVJ = 45°C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine 25 380 400 A A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 360 400 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 725 750 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 650 650 A2 s A2 s -40 ... + 150 150 -40 ... + 150 °C °C °C 2500 3000 V∼ V∼ 2 22 Nm g ∫ i2 dt TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL ≤ 1 mA t = 1 min t=1s Mounting torque typ. (M5) Maximum Ratings Features • Package with ¼ “ fast-on • • • • • terminals Isolation voltage 3000 V∼ Planar glasspassivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered, E 148688 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with one screw • Space and weight savings • Improved temperature and power cycling capability Package, style and outline Symbol Test Conditions Characteristic Value IR VR = VRRM VR = VRRM ≤ ≤ 0.3 5.0 mA mA VF VTO rT RthJC IF = 150 A TVJ = 25°C For power-loss calculations only TVJ = TVJM ≤ 2.2 0.85 12 V V mΩ per diode; DC current per module 9.3 1.55 K/W K/W RthJK per diode; DC current per module 10.2 1.7 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 12.7 9.4 50 mm mm m/s2 TVJ = 25°C TVJ = TVJM POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 Dimensions in mm (1mm = 0.0394“) 2003 POWERSEM reserves the right to change limits, test conditions and dimensions PSD 25 10 IF(OV) -----IFSM 30 IFSM (A) TVJ=45°C TVJ=150°C A 25 T=150°C 1.6 20 1.4 15 1.2 10 1 380 3 2 As 340 TVJ=45°C TVJ=150°C 0 VRRM 0.8 5 1/2 VRRM T=25°C IF 0 VF 1 0.6 V 1 VRRM 10 1.5 0.4 0 1 10 Fig. 1 Forward current versus voltage drop per diode 60 [W] 10 2 2 1 2 3 t[ms] 10 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 4 t [ms] 6 10 Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor) 55 TC 60 PSD 25N 0.53 0.12 50 65 = RTHCA [K/W] 70 0.95 30 DC [A] sin.180° 75 rec.120° 80 85 40 90 1.78 rec.60° rec.30° 20 95 100 30 105 110 3.45 20 10 PVTOT 0 IFAVM 20 115 120 DC sin.180° rec.120° rec.60° rec.30° 10 125 130 8.45 135 140 145 °C 150 [A] 0 Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature IdAV 0 50 100 150 200 T (°C) C Fig.5 Maximum forward current at case temperature 12 Z thJK Z thJC K/W 10 8 6 4 2 Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions