TM ECO-PAC 2 IGBT Module PSII 24/06* IC25 = 19 A VCES = 600 V VCE(sat)typ. = 1.9 V Sixpack Preliminary Data Sheet S9 L9 N5 A5 N9 R5 D5 X18 W14 H5 A1 F3 G1 C1 K10 K13 PSII 24/06* K12 IGBTs *NTC optional Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES 600 V ± 20 V IC25 IC80 TC = 25°C TC = 80°C 19 14 A A ICM VCEK VGE = ±15 V; RG = 82 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH 20 A tSC (SCSOA) VCE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C non-repetitive 10 µs Ptot TC = 25°C 73 W Features • VCES • • Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 10 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.35 mA; VGE = VCE ICES VCE = VCES; IGES td(on) tr td(off) tf Eon Eoff VGE = 0 V; TVJ = 25°C TVJ = 125°C 1.9 2.2 4.5 Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300 V; VGE = 15 V; IC = 10 A RthJC RthJH (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) V V 6.5 V 0.6 mA mA 2.7 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 300 V; IC = 10 A VGE = ±15 V; RG = 82 Ω 2.4 100 nA 35 35 230 30 0.4 0.3 ns ns ns ns mJ mJ 600 39 pF nC 3.4 1.7 K/W K/W • NPT IGBT’s - positive temperature coefficient of saturation voltage - fast switching FRED diodes - fast reverse recovery - low forward voltage Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate UL registered, E 148688 Applications • • AC drives power supplies with power factor correction Advantages • • • • • Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSII 24/06 Diodes Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions VF IF = 10 A; TVJ = 25°C TVJ = 125°C 1.9 1.4 IRM trr IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V 11 80 A ns RthJC RthJH with heatsink compound (0.42 K/m.K; 50 µm) 7.0 3.5 K/W K/W 21 14 A A Package style and outline Dimensions in mm (1mm = 0.0394“) Characteristic Values min. typ. max. 2.1 V V Data according to IEC 60747 and refer to a single diode unless otherwise stated. Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 4.75 5.0 3375 5.25 kΩ K Component Symbol Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+125 °C °C 3600 V~ 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s 2 VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 s Md Mounting torque (M4) a Max. allowable acceleration Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight mm mm 24 g 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSII 24/06 IGBT 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSII 24/06 IGBT Transient thermal resistance junction to heatsink 10 (ZthJH is measured using 50 µm thermal grease) 1 D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 IGBT ZthJH [K/W] 0.1 0.01 0.001 100 t (s) 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSII 24/06 Diode 30 1.4 T = 100°C nC VJ V = 300V 1.2 R A 25 IF TVJ=150°C TVJ=100°C TVJ= 25°C 20 15 1.0 Qr 40 TVJ= 100°C A VR = 300V IRM IF= 20A IF= 10A IF= 5A 0.8 30 IF= 20A IF= 10A IF= 5A 20 0.6 10 0.4 5 10 0.2 0 0.0 0.5 1.0 0.0 100 2.0 V 2.5 1.5 VF Forward current IF versus VF 0 A/µs 1000 -diF/dt 0 Reverse recovery charge Qr versus -diF/dt 120 2.0 trr 1.5 Kf 1.0 0.6 5 0.3 TVJ= 100°C IF = 10A 70 40 80 120 °C 160 0 200 400 TVJ 600 0 800 1000 A/µs 0 -diF/dt Dynamic parameters Qr, IRM versus TVJ 0.9 10 Qr 0 µs V FR t fr tfr IF= 20A IF= 10A IF= 5A 80 0.5 1.2 V VFR 15 90 IRM 600 A/µs 800 1000 -diF/dt 20 110 100 400 Peak reverse current IRM versus -diF/dt TVJ= 100°C VR = 300V ns 0.0 200 Recovery time trr versus -diF/dt Transient thermal resistance junction to heatsink 200 400 8-06A 0.0 600 A/µs 800 1000 diF/dt Peak forward voltage VFR and tfr versus diF/dt 10 (ZthJH is measured using 50 µm thermal grease) 1 Fred ZthJH[K/W] D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 t(s) 0.1 1 10 100 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20