High Voltage Diode Module (TRACTION - PACTM) IFRMS = 180 A IFAVM = 82 A VRRM = 600-1800 V PSTKD 82 Preliminary Data Sheet VRSM V VRRM V Type 700 900 1100 1300 1500 1700 1900 600 800 1000 1200 1400 1600 1800 PSTKD PSTKD PSTKD PSTKD PSTKD PSTKD PSTKD 82/06 82/08 82/10 82/12 82/14 82/16 82/18 3 - 2 ~ 1 + Features ● Symbol Test Conditions IFRMS IFAVM TVJ = TVJM TC = 110°C; 180° sine ITSM TVJ = 45°C; VR = 0 òi2dt Maximum Ratings 180 82 A A t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 1700 1950 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 1530 1740 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 14450 15700 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 11700 12500 A2 s A2 s -40 ...125 125 -40 ...125 °C °C °C ● ● l● Applications ● ● ● ● TVJ TVJM Tstg Weight 50/60 Hz, RMS t = 1 min IISOL ≤ 1 mA t=1s Mounting torque (M5) Terminal connection torque (ISK M5) Typical including screws Symbol Test Conditions IRRM, IDRM TVJ = TVJM; VR = VRRM VT IT VT0 rT VISOL Md 15 Advantages ● ● ● ● Space and weight savings Simple mounting with two screws Improved temperature and power cycling Reduced protection circuits Dimensions in mm (1 mm = 0.0394") mA V For power-loss calculations only (TVJ = TVJM) TVJ = TVJM 0.8 2.7 V mΩ QS IRM TVJ = 125 °C; IF=50 A, -di/dt = 3 A/µs 170 45 µC A RthJC per diode; DC current per module per diode; DC current per module Creeping distance on surface Creepage distance in air Maximum allowable acceleration dS dA a Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies Characteristic Values 1.74 RthJK = 200 A; TVJ = 25°C 3000 V~ 3600 V~ 5.0/44 Nm/lb.in. 3.0/26 Nm/lb.in. 56 g International standard package, JEDEC TO-240 AA Direct Copper Bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ 0.35 0.18 0.55 0.275 12.7 9.6 50 K/W K/W K/W K/W mm mm m/s2 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSTKD 82 Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 ∫i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSTKD 82 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180° 120° 60° 30° RthJC (K/W) 0.35 0.37 0.39 0.43 0.47 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) ti (s) 0.013 0.072 0.265 0.0014 0.062 0.375 Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180° 120° 60° 30° RthJK (K/W) 0.55 0.57 0.59 0.63 0.67 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) ti (s) 0.013 0.072 0.265 0.2 0.0014 0.062 0.375 1.32 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20