APTGT100TL60T3G Three level inverter Trench + Field Stop IGBT Power Module VCES = 600V IC = 100A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring 28 27 26 25 23 22 Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant 20 19 18 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 … Q1 to Q4 Absolute maximum ratings Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Reverse Bias Safe Operating Area Tj = 150°C 200A @ 550V TC = 25°C TC = 80°C TC = 25°C Unit V February, 2009 IC Max ratings 600 150 100 200 ±20 340 RBSOA Parameter Collector - Emitter Breakdown Voltage A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTGT100TL60T3G – Rev 0 Symbol VCES APTGT100TL60T3G All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 100A Tj = 150°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Max Unit 250 1.9 µA 6.5 400 V nA Max Unit V Q1 to Q4 Dynamic Characteristics Td(on) Tr Td(off) Tf Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data RthJC Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=100A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 100A RG = 3.3Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 100A RG = 3.3Ω VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 100A Tj = 25°C RG = 3.3Ω Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Junction to Case Thermal Resistance Min Typ 6100 390 190 pF 1.1 µC 115 45 225 ns 55 130 50 ns 300 70 0.4 0.875 2.5 3.5 mJ mJ 500 A 0.44 °C/W February, 2009 QG Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance www.microsemi.com 2-7 APTGT100TL60T3G – Rev 0 Symbol Cies Coes Cres APTGT100TL60T3G CR1 to CR4 diode ratings and characteristics Symbol Characteristic VRRM IRM IF Test Conditions Maximum Reverse Leakage Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy Typ Max 600 Tj = 25°C Tj = 150°C IF = 75A VGE = 0V Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C 75 1.6 1.5 100 Tj = 150°C Tj = 25°C 150 3.6 Tj = 150°C Tj = 25°C Tj = 150°C 7.6 0.85 1.8 IF = 75A VR = 300V di/dt =2000A/µs Unit V VR=600V DC Forward current VF RthJC Min Maximum Peak Repetitive Reverse Voltage 250 500 Junction to Case Thermal Resistance µA A 2 V ns µC mJ 0.98 °C/W Max Unit V CR5 & CR6 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current VR=600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy RthJC Test Conditions IF = 100A VGE = 0V IF = 100A VR = 300V di/dt =2000A/µs Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 250 500 100 1.6 1.5 125 220 4.7 Tj = 150°C Tj = 25°C 9.9 1.1 Tj = 150°C 2.4 Junction to Case Thermal Resistance µA A 2 V ns µC mJ 0.77 °C/W Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % February, 2009 Characteristic Resistance @ 25°C T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp ⎢ B25 / 85 ⎜⎜ T T ⎝ 25 ⎠⎦ ⎣ www.microsemi.com 3-7 APTGT100TL60T3G – Rev 0 Symbol R25 ∆R25/R25 B25/85 ∆B/B APTGT100TL60T3G Thermal and package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Min 2500 -40 -40 -40 2.5 Typ Max 175 125 100 4.7 110 Unit V °C N.m g SP3 Package outline (dimensions in mm) 28 17 1 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com Q1 to Q4 Typical performance curve 80 40 February, 2009 VCE=300V D=50% R G=3.3Ω T J=150°C 60 T c =85°C Hard switching 20 0 0 25 50 75 100 125 150 IC (A) www.microsemi.com 4-7 APTGT100TL60T3G – Rev 0 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current APTGT100TL60T3G Output Characteristics (VGE=15V) Output Characteristics 200 200 TJ=25°C 175 TJ=150°C 125 IC (A) IC (A) 150 TJ=125°C 150 100 75 50 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 7 175 1 1.5 2 VCE (V) VCE = 300V VGE = 15V RG = 3.3Ω TJ = 150°C 6 TJ=25°C 150 5 E (mJ) 125 100 TJ=125°C 75 0.5 TJ=150°C TJ=25°C 4 3 5 6 7 Eon 0 0 8 9 10 11 0 12 25 50 75 100 125 150 175 200 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 250 VCE = 300V VGE =15V IC = 100A TJ = 150°C 200 Eoff Eon IF (A) E (mJ) 3.5 Eoff 1 25 6 3 2 50 8 2.5 Energy losses vs Collector Current Transfert Characteristics 200 IC (A) VGE=9V 25 TJ=25°C 0 VGE=15V 100 50 0 VGE=13V 125 75 25 VGE=19V TJ = 150°C 175 4 150 100 2 VGE=15V TJ=150°C RG=3.3Ω 50 0 0 0 5 10 15 20 25 Gate Resistance (ohms) 30 0 100 200 300 400 VCE (V) 500 600 700 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 0.9 0.7 February, 2009 0.3 0.5 0.2 0.1 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5-7 APTGT100TL60T3G – Rev 0 Thermal Impedance (°C/W) 0.5 APTGT100TL60T3G CR1 to CR4 Typical performance curve Forward Characteristic of diode 150 125 IF (A) 100 75 50 TJ=150°C 25 TJ=25°C 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 Switching Energy Losses vs Gate Resistance Energy losses vs Collector Current 2 3 VCE = 300V IC = 75A TJ = 150°C 2 E (mJ) E (mJ) 1.5 VCE = 300V RG = 4.7Ω TJ = 150°C 1 1 0.5 0 0 5 10 15 20 25 30 0 35 0 25 50 75 100 125 150 IF (A) Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 0.9 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 February, 2009 1 Rectangular Pulse Duration in Seconds www.microsemi.com 6-7 APTGT100TL60T3G – Rev 0 Thermal Impedance (°C/W) 1.2 APTGT100TL60T3G CR5 & CR6 Typical performance curve Forward Characteristic of diode 200 175 150 IF (A) 125 100 75 TJ=150°C 50 25 TJ=25°C 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 Energy losses vs Collector Current Switching Energy Losses vs Gate Resistance 4 3 VCE = 300V IC = 100A TJ = 150°C 2.5 3 E (mJ) E (mJ) 2 VCE = 300V RG = 3.3Ω TJ = 150°C 1.5 1 2 1 0.5 0 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 200 IF (A) Gate Resistance (ohms) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 February, 2009 0.7 Rectangular Pulse Duration in Seconds Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7-7 APTGT100TL60T3G – Rev 0 Thermal Impedance (°C/W) 0.8