APTGT50TL601G Three level inverter Trench + Field Stop IGBT Power Module VCES = 600V IC = 50A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Very low stray inductance • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant All multiple inputs and outputs must be shorted together 5/6 ; 9/10 Q1 to Q4 Absolute maximum ratings IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 600 80 50 100 ±20 176 100A @ 550V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTGT50TL601G– Rev0 March, 2009 Symbol VCES APTGT50TL601G All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 50A Tj = 150°C VGE = VCE , IC = 600µA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Min Typ Max Unit 250 1.9 µA 6.5 600 V nA Max Unit V Q1 to Q4 Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data RthJC Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=50A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2Ω Tj = 25°C VGE = ±15V Tj = 150°C VBus = 300V IC = 50A Tj = 25°C RG = 8.2Ω Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Junction to Case Thermal Resistance 3150 200 95 pF 0.5 µC 110 45 200 ns 40 120 50 250 ns 60 0.3 0.43 1.35 1.75 mJ mJ 250 A 0.85 www.microsemi.com °C/W 2-7 APTGT50TL601G– Rev0 March, 2009 Symbol Characteristic APTGT50TL601G CR1 to CR4 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy RthJC Test Conditions VR=600V IF = 30A VGE = 0V IF = 30A VR = 300V di/dt =1800A/µs Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 30 1.6 1.5 100 150 1.5 Tj = 150°C Tj = 25°C Tj = 150°C 3.1 0.34 0.75 Max 150 350 Junction to Case Thermal Resistance Unit V µA A 2 V ns µC mJ 2.45 °C/W Max Unit CR5 & CR6 diode ratings and characteristics Symbol Characteristic VRRM IRM IF Min Maximum Reverse Leakage Current trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy V VR=600V Tj = 25°C Tj = 150°C IF = 50A VGE = 0V Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C 50 1.6 1.5 100 Tj = 150°C Tj = 25°C 150 2.6 Tj = 150°C Tj = 25°C Tj = 150°C 5.4 0.60 1.20 DC Forward current Diode Forward Voltage Typ 600 Maximum Peak Repetitive Reverse Voltage VF RthJC Test Conditions IF = 50A VR = 300V di/dt =1800A/µs 150 350 Junction to Case Thermal Resistance µA A 2 V ns µC mJ 1.42 °C/W Max Unit V Thermal and package characteristics Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink www.microsemi.com M4 Min 2500 -40 -40 -40 2.5 Typ 175 125 100 4.7 80 °C N.m g 3-7 APTGT50TL601G– Rev0 March, 2009 Symbol VISOL TJ TSTG TC Torque Wt APTGT50TL601G SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com Q1 to Q4 Typical performance curve 80 VCE=300V D=50% R G=8.2Ω T J=150°C 60 T c =85°C 40 Hard switching 20 0 0 20 40 60 80 IC (A) www.microsemi.com 4-7 APTGT50TL601G– Rev0 March, 2009 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current APTGT50TL601G Output Characteristics (VGE=15V) Output Characteristics 100 100 TJ=25°C TJ = 150°C TJ=125°C VGE=13V TJ=150°C 60 60 VGE=15V 40 40 20 20 TJ=25°C 0 0 0.5 1 1.5 VCE (V) VGE=9V 0 2 2.5 0 3 3.5 2.5 60 E (mJ) IC (A) 1 1.5 2 VCE (V) 2.5 VCE = 300V VGE = 15V RG = 8.2Ω TJ = 150°C 3 TJ=25°C 80 0.5 3 3.5 Energy losses vs Collector Current Transfert Characteristics 100 VGE=19V 80 IC (A) IC (A) 80 40 Eoff 2 1.5 1 TJ=150°C 20 TJ=25°C 0 0 5 6 7 Eon 0.5 8 9 10 11 0 12 20 40 80 100 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 3 125 2.5 Eoff 100 IC (A) 2 E (mJ) 60 1.5 50 VCE = 300V VGE =15V IC = 50A TJ = 150°C 1 Eon 0.5 75 VGE=15V TJ=150°C RG=8.2Ω 25 0 0 5 15 25 35 45 55 Gate Resistance (ohms) 65 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 0.6 0.9 0.7 0.5 0.4 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5-7 APTGT50TL601G– Rev0 March, 2009 Thermal Impedance (°C/W) 1 APTGT50TL601G CR1 to CR4 Typical performance curve Forward Characteristic of diode 60 50 IF (A) 40 30 20 TJ=150°C 10 TJ=25°C 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 Switching Energy Losses vs Gate Resistance Energy losses vs Collector Current 1 1 VCE = 300V VGE =15V IC = 30A TJ = 150°C 0.75 E (mJ) E (mJ) 0.75 0.5 0.5 0.25 0.25 0 0 0 10 20 30 40 50 60 Gate Resistance (ohms) VCE = 300V VGE = 15V RG = 10Ω TJ = 150°C 0 70 10 20 30 40 50 60 IF (A) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 2.5 2 0.9 0.7 1.5 0.5 1 0.3 0.5 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 6-7 APTGT50TL601G– Rev0 March, 2009 Thermal Impedance (°C/W) 3 APTGT50TL601G CR5 & CR6 Typical performance curve Forward Characteristic of diode 100 IF (A) 80 60 40 TJ=150°C 20 TJ=25°C 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 Switching Energy Losses vs Gate Resistance Energy losses vs Collector Current 1.5 1.2 1 0.8 E (mJ) E (mJ) 1 0.6 VCE = 300V VGE =15V IC = 50A TJ = 150°C 0.4 0.2 VCE = 300V VGE = 15V RG = 8.2Ω TJ = 150°C 0.5 0 0 5 15 25 35 45 55 0 65 20 40 60 80 100 IF (A) Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.6 1.4 1.2 1 0.9 0.7 0.8 0.5 0.6 0.3 0.4 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7-7 APTGT50TL601G– Rev0 March, 2009 Rectangular Pulse Duration in Seconds