MMBTA13 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM 0.3 A * Collector-base voltage V(BR)CBO: 30 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 1 BASE 0.055(1.40) 0.047(1.20) 2 EMITTER 0.006(0.15) 0.003(0.08) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.019(2.00) 0.071(1.80) Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. 1 0.118(3.00) 3 0.110(2.80) 2 For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) o MAXIMUM RATINGS ( @ TA = 25 C unless otherwise noted ) RATINGS SYMBOL VALUE UNITS o O Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C PD 300 mW Max. Operating Temperature Range TJ 150 o C -55 to +150 o C Storage Temperature Range TSTG ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Notes: 1. Alumina=0.4*0.3*0.024in.99.5% alumina 2. "Fully ROHS Complant", "100% Sn plating (Pb-free)". SYMBOL MIN. TYP. MAX. R qJA - - 417 UNITS o C/W 2007-5 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic Symbol Min Max Unit V(BR)CES 30 - Vdc Collector Cutoff Current (V CB = 30Vdc, I E = 0) ICBO - 100 nVdc Emitter Cutoff Current (V EB = 10Vdc, I C = 0) IEBO - 100 nVdc 5000 - 10,000 - VCE(sat) - 1.5 Vdc VBE - 2.0 Vdc fT 125 - MHz OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 100uAdc, V BE = 0) ON CHARACTERISTICS(1) DC Current Gain (I C = 10mAdc, V CE = 5.0Vdc) (I C = 100mAdc, V CE = 5.0Vdc) Collector-Emitter Saturation Voltage (I C = 100mAdc, I B = 0.1mAdc) Base-Emitter On Voltage (I C = 100mAdc, V CE = 5.0Vdc) hFE - SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (2) (I C = 10mAdc, V CE = 5.0Vdc, f= 100MHz) <300ms,Duty Cycle-<2.0% Notes : 1. Pulse Test: Pulse Width2. fT = |hfe|.ftest RATING AND CHARACTERISTICS CURVES ( MMBTA13 ) 2.0 BANDWIDTH = 1.0 Hz RS~0 200 in, NOISE CURRENT (PA) en, NOISE VOLTAGE (nV) 500 100 10uA 50 100uA 20 IC= 1.0 mA 10 5.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 IC= 1.0 mA 0.3 0.2 100uA 0.1 0.07 0.05 10uA 0.03 10 20 50 100 200 500 1 k 2 k 0.02 10 20 5 k 10 k 20 k 50 k 100 k 50 100 200 500 1 k 2 k f, FREQUENCY (Hz) Figure 2 Noise Current 14 BANDWIDTH = 10 Hz TO 15.7 kHz 100 NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 1 Noise Voltage 200 IC==10uA 1.0 mA 70 50 100 uA 30 20 10 1.0 mA 1.0 2.0 BANDWIDTH = 10 Hz TO 15.7 kHz 12 10 10 uA 8.0 100 uA 6.0 4.0 IC=1.0mA 2.0 5.0 10 20 50 100 200 500 0 1.0 100 2.0 5.0 RS, SOURCE RESISTANCE (KW) |hfe|, SMALL-SIGNALCURRENT GAIN 4.0 TJ=25OC 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 VR, REVERSE VOLTAGE (V) Figure 5 Capacitance 20 50 100 200 500 100 Figure 4 Wideband Noise Figure 20 10 10 RS, SOURCE RESISTANCE (KW) Figure 3. Total Wideband Noise Voltage C, CAPACITANCE (PF) 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 10 20 40 2.0 VVCE=5.0V CE=5.0V f=100MHz f=100MHz TJ=25OCO TJ=25 C 1.0 0.8 0.6 0.4 0.2 0.5 1.0 2.0 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 6 High Frequency Current Gain 500 RATING AND CHARACTERISTICS CURVES ( MMBTA13 ) 2.0 BANDWIDTH = 1.0 Hz RS~0 200 in, NOISE CURRENT (PA) en, NOISE VOLTAGE (nV) 500 100 10uA 50 100uA 20 IC= 1.0 mA 10 5.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 IC= 1.0 mA 0.3 0.2 100uA 0.1 0.07 0.05 10uA 0.03 10 20 50 100 200 500 1 k 2 k 0.02 10 20 5 k 10 k 20 k 50 k 100 k 50 100 200 500 1 k 2 k f, FREQUENCY (Hz) Figure 2 Noise Current 14 BANDWIDTH = 10 Hz TO 15.7 kHz 100 NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 1 Noise Voltage 200 IC==10uA 1.0 mA 70 50 100 uA 30 20 10 1.0 mA 1.0 2.0 BANDWIDTH = 10 Hz TO 15.7 kHz 12 10 10 uA 8.0 100 uA 6.0 4.0 IC=1.0mA 2.0 5.0 10 20 50 100 200 500 0 1.0 100 2.0 5.0 RS, SOURCE RESISTANCE (KW) |hfe|, SMALL-SIGNALCURRENT GAIN 4.0 TJ=25OC 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 VR, REVERSE VOLTAGE (V) Figure 5 Capacitance 20 50 100 200 500 100 Figure 4 Wideband Noise Figure 20 10 10 RS, SOURCE RESISTANCE (KW) Figure 3. Total Wideband Noise Voltage C, CAPACITANCE (PF) 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 10 20 40 2.0 VVCE=5.0V CE=5.0V f=100MHz f=100MHz TJ=25OCO TJ=25 C 1.0 0.8 0.6 0.4 0.2 0.5 1.0 2.0 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 6 High Frequency Current Gain 500 RATING AND CHARACTERISTICS CURVES ( MMBTA13 ) IC, COLLECTOR CURRENT(mA) 1.0 k 700 500 300 200 1.0 ms TC=25 C O TA=25 C O 100us 1.0 s 100 70 50 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1.0 2.0 4.0 6.0 10 20 VCE,COLLECTOR-EMITTER VOLTAGE(VOLTS) 40 Figure 12 Active Region Safe Operating Area DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. 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