STMICROELECTRONICS BDX87C

BDX87C
BDX88C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■
SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The BDX87C is a silicon epitaxial-base NPN
power transistors in monolithic Darlington
configuration and are mounted in Jedec TO-3
metal case. They are intented for use in power
linear and switching applications.
The complementary PNP types is the BDX88C.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 6 K Ω
R2 Typ. = 55 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
NPN
BDX87C
PNP
BDX88C
Unit
V CBO
Collector-base Voltage (I E = 0)
100
V
V CEO
Collector-emitter Voltage (I B = 0)
100
V
V EBO
Emitter-base Voltage (I C = 0)
5
V
IC
I CM
IB
Collector Current
12
A
Collector Peak Current (repetitive)
18
A
Base Current
0.2
A
P tot
Total Dissipation at T c ≤ 25 C
T stg
Storage Temperature
Tj
June 1997
o
Max. Operating Junction Temperature
120
W
-65 to 200
o
C
200
o
C
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BDX87C-BDX88C
THERMAL DATA
R thj-case
Thermal Resistance Junction-case
Max
o
1.45
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
I CBO
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
0.5
5
mA
mA
Collector Cut-off
Current (I E = 0)
V CB = 100 V
V CB = 100 V
I CEO
Collector Cut-off
Current (I B = 0)
V CB = 50 V
1
mA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
1
mA
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
T
case
= 150 o C
I C = 100 mA
100
V
V CE(sat) ∗
Collector-emitter
Saturation Voltage
IC = 6 A
I C = 12 A
I B = 24 mA
I B = 120 mA
2
3
V
V
V BE(sat) ∗
Base-emitter
Saturation Voltage
I C = 12 A
I B =120 mA
4
V
V BE ∗
Base-emitter Voltage
IC = 6 A
V CE = 3 V
2.8
V
h FE ∗
DC Current Gain
IC = 5 A
IC = 6 A
I C = 12 A
V CE = 3 V
V CE = 3 V
V CE = 3 V
VF∗
hfe ∗
Parallel-diode Forward
Voltage
IF = 3 A
IF = 8 A
Small SignalCurrent
Gain
IC = 5 A
f = 1MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
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1000
750
100
18000
1.8
2.5
V CE = 3 V
25
V
V
BDX87C-BDX88C
TO-3 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.00
13.10
0.433
0.516
B
0.97
1.15
0.038
0.045
C
1.50
1.65
0.059
0.065
D
8.32
8.92
0.327
0.351
E
19.00
20.00
0.748
0.787
G
10.70
11.10
0.421
0.437
N
16.50
17.20
0.649
0.677
P
25.00
26.00
0.984
1.023
R
4.00
4.09
0.157
0.161
U
38.50
39.30
1.515
1.547
V
30.00
30.30
1.187
1.193
A
P
C
O
N
B
V
E
G
U
D
R
P003F
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BDX87C-BDX88C
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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