APT17M120JCU3 ISOTOP® Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1200V RDSon = 680mΩ typ @ Tj = 25°C ID = 17A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF A G • • • A S Power MOS 8™ MOSFET - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant D ISOTOP® Absolute maximum ratings IDM VGS RDSon PD IAR Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Max ratings 1200 17 13 90 ±30 816 480 12 Unit V September, 2009 ID Parameter Drain - Source Breakdown Voltage A V mΩ W A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APT17M120JCU3 – Rev 0 Symbol VDSS APT17M120JCU3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Test Conditions Tj = 25°C VDS =1200V VGS = 0V Tj = 125°C VGS = 10V, ID = 12A VGS = VDS, ID = 2.5mA VGS = ±30 V Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Min 3 Typ 680 4 Max 100 500 816 5 ±100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 12A Td(on) Turn-on Delay Time Tr Td(off) Tf Min Turn-off Delay Time Fall Time pF 260 nC 42 120 45 Resistive switching @ 25°C VGS = 15V VBus = 800V ID = 12A RG = 2.2Ω Rise Time Typ 6696 615 80 27 ns 145 42 SiC chopper diode ratings and characteristics IRM Maximum Reverse Leakage Current Test Conditions VR=1200V Min 1200 Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C Typ Max 32 56 10 1.6 2.3 200 1000 IF DC Forward Current VF Diode Forward Voltage IF = 10A QC Total Capacitive Charge IF = 10A, VR = 600V di/dt =500A/µs 80 C Total Capacitance f = 1MHz, VR = 200V 96 f = 1MHz, VR = 400V 69 Unit V µA A 1.8 3 V nC pF Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Min Junction to Case Thermal Resistance Typ Mosfet SiC Diode Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight www.microsemi.com 2500 -40 Max 0.26 1.65 20 September, 2009 Thermal and package characteristics Unit °C/W V 150 300 1.5 29.2 °C N.m g 2-5 APT17M120JCU3 – Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APT17M120JCU3 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) Drain Anode 30.1 (1.185) 30.3 (1.193) * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Gate Dimensions in Millimeters and (Inches) Typical Mosfet Performance Curve Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 0.05 0 0.00001 Single P ulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) September, 2009 0.25 www.microsemi.com 3-5 APT17M120JCU3 – Rev 0 Thermal Impedance (°C/W) 0.3 APT17M120JCU3 Low Voltage Output Characteristics Low Voltage Output Characteristics 20 35 VGS=10V TJ=125°C ID, Drain Current (A) TJ=25°C 25 20 TJ=125°C 15 10 15 VGS=6, 7,8 & 9V 5V 10 5 4.5V 5 0 0 0 5 10 15 0 20 5 VDS, Drain to Source Voltage (V) 20 25 30 Transfert Characteristics 20 3 ID, Drain Current (A) VGS=10V ID=12A 2.5 2 1.5 1 0.5 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 15 TJ=125°C 10 TJ=25°C 5 0 25 50 75 100 125 150 0 2 3 4 5 6 VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Capacitance vs Drain to Source Voltage 10000 12 ID=12A TJ=25°C 10 1 TJ, Junction Temperature (°C) Ciss VDS=240V C, Capacitance (pF) VDS=600V 8 6 VDS=960V 4 2 1000 Coss 100 Crss 10 0 0 40 80 120 160 200 240 280 0 50 100 150 200 VDS, Drain to Source Voltage (V) September, 2009 RDSon, Drain to Source ON resistance 15 VDS, Drain to Source Voltage (V) Normalized RDS(on) vs. Temperature VGS, Gate to Source Voltage 10 Gate Charge (nC) www.microsemi.com 4-5 APT17M120JCU3 – Rev 0 ID, Drain Current (A) 30 APT17M120JCU3 Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.8 0.9 1.6 1.4 0.7 1.2 1 0.5 0.8 0.3 0.6 0.4 0.1 0.2 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 20 100 IR Reverse Current (µA) IF Forward Current (A) TJ=25°C 16 TJ=75°C 12 TJ=125°C 8 4 TJ=175°C 75 50 TJ=75°C TJ=125°C 25 TJ=175°C TJ=25°C 0 0 0.5 1 1.5 2 2.5 3 3.5 0 400 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) VF Forward Voltage (V) Capacitance vs.Reverse Voltage C, Capacitance (pF) 700 600 500 400 300 200 100 0 1000 September, 2009 10 100 VR Reverse Voltage ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APT17M120JCU3 – Rev 0 1