MICROSEMI APTM50DHM65T3G

APTM50DHM65T3G
VDSS = 500V
RDSon = 65mΩ typ @ Tj = 25°C
ID = 51A @ Tc = 25°C
Asymmetrical - Bridge
MOSFET Power Module
13
14
Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives
Q1
CR3
18
22
7
Features
• Power MOS 8™ MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
19
23
8
Q4
CR2
4
3
29
31
30
32
16
15
R1
28 27 26 25
23 22
20 19 18
29
16
30
15
31
14
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
13
32
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23…
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Tc = 25°C
Max ratings
500
51
38
270
±30
78
390
42
Unit
V
A
V
mΩ
W
A
August, 2009
ID
Parameter
Drain - Source Breakdown Voltage
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–5
APTM50DHM65T3G – Rev 0
Symbol
VDSS
APTM50DHM65T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Tj = 25°C
VDS = 500V
VGS = 0V
Tj = 125°C
VGS = 10V, ID = 42A
VGS = VDS, ID = 2.5mA
VGS = ±30 V
Min
3
Typ
65
4
Max
250
1000
78
5
±100
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 42A
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Rise Time
Turn-off Delay Time
Fall Time
Min
Typ
10800
1164
148
pF
340
nC
75
155
60
Resistive switching @ 25°C
VGS = 15V
VBus = 333V
ID = 42A
RG = 2.2Ω
70
ns
155
50
Diode ratings and characteristics
IRM
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
Test Conditions
VR=600V
Qrr
Reverse Recovery Charge
IF = 60A
VR = 400V
di/dt = 200A/µs
Typ
Max
250
500
60
1.7
2
Tj = 125°C
1.4
Tj = 25°C
70
Tj = 125°C
140
Tj = 25°C
100
Tj = 125°C
690
Unit
V
µA
A
2.3
V
ns
nC
August, 2009
Reverse Recovery Time
Tj = 25°C
Tj = 125°C
Tc = 80°C
IF = 60A
IF = 120A
IF = 60A
trr
Min
600
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2–5
APTM50DHM65T3G – Rev 0
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APTM50DHM65T3G
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
MOSFET
Diode
To Heatsink
M4
4000
-40
-40
-40
2.5
Max
0.32
0.85
Unit
°C/W
V
150
125
100
4.7
110
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT =
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
R25
T: Thermistor temperature
⎡
⎛ 1
1 ⎞⎤ RT: Thermistor value at T
exp ⎢ B25 / 85 ⎜⎜
− ⎟⎟⎥
⎝ T25 T ⎠⎦
⎣
SP3 Package outline (dimensions in mm)
12
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
www.microsemi.com
3–5
APTM50DHM65T3G – Rev 0
August, 2009
28
17
1
APTM50DHM65T3G
Typical MOSFET Performance Curve
Low Voltage Output Characteristics
Low Voltage Output Characteristics
250
160
VGS=7,8 &10V
140
ID, Drain Current (A)
ID, Drain Current (A)
VGS=10V
TJ=25°C
200
150
100
TJ=125°C
50
6.5V
120
100
6V
80
5.5V
60
40
20
0
TJ=125°C
0
0
5
10
15
20
0
5
20
25
30
125
VGS=10V
ID=42A
2
1.5
1
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
100
ID, Drain Current (A)
RDSon, Drain to Source ON resistance
15
Transfert Characteristics
Normalized RDSon vs. Temperature
2.5
TJ=125°C
75
50
25
TJ=25°C
0.5
0
25
50
75
100
125
150
0
1
TJ, Junction Temperature (°C)
Gate Charge vs Gate to Source
3
4
5
6
C, Capacitance (pF)
VDS=250V
8
VDS=400V
6
7
Capacitance vs Drain to Source Voltage
100000
VDS=100V
ID=42A
TJ=25°C
10
2
VGS, Gate to Source Voltage (V)
12
VGS, Gate to Source Voltage
10
VDS, Drain to Source Voltage (V)
VDS, Drain to Source Voltage (V)
4
Ciss
10000
1000
Coss
Crss
100
2
10
0
0
60
120
180
240
300
0
360
50
100
150
200
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
Drain Current vs Source to Drain Voltage
ISD, Reverse Drain Current (A)
125
100
TJ=125°C
75
50
TJ=25°C
25
0
0
0.2
0.4
0.6
0.8
1
1.2
VSD, Source to Drain Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.25
0.7
0.2
August, 2009
0.3
0.5
0.15
0.1
0.05
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4–5
APTM50DHM65T3G – Rev 0
Thermal Impedance (°C/W)
0.35
APTM50DHM65T3G
Typical diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.9
0.9
0.8
0.7
0.7
0.6
0.5
0.5
0.4
0.3
0.3
0.2
0.1
0.05
0.1
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
175
trr, Reverse Recovery Time (ns)
160
TJ=125°C
80
TJ=25°C
40
0
0.0
0.5
1.0
1.5
2.0
2.5
125
30 A
100
60 A
75
50
3.0
0
200
400 600 800
-diF/dt (A/µs)
QRR vs. Current Rate Charge
120 A
60 A
1.5
30 A
1.0
0.5
0.0
0
200
400
600
800
1000 1200
40
TJ=125°C
VR=400V
35
120 A
30
25
60 A
20
15
10
5
30 A
0
0
200
-diF/dt (A/µs)
400
600
800
1000 1200
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
DC Forward Current vs. Case Temp.
500
100
400
80
300
60
IF (A)
C, Capacitance (pF)
1000 1200
IRRM vs. Current Rate of Charge
2.0
IRRM, Reverse Recovery Current (A)
QRR, Reverse Recovery Charge (µC)
VF, Anode to Cathode Voltage (V)
TJ=125°C
VR=400V
TJ=125°C
VR=400V
120 A
200
40
100
20
0
Duty Cycle = 0.5
TJ=175°C
August, 2009
120
150
0
1
10
100
1000
25
VR, Reverse Voltage (V)
50
75
100
125
150
175
Case Temperature (°C)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5–5
APTM50DHM65T3G – Rev 0
IF, Forward Current (A)
200