STB/P434S S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 9.2 @ VGS=10V 40V TO-220 and TO-263 Package. 60A 11.5 @ VGS=4.5V D D G G D S S STB SERIES TO-263(DD-PAK) G STP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter Limit Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 60 A IDM -Pulsed TC=25°C TC=70°C a 48 A 176 A 91 mJ TC=25°C 62.5 W TC=70°C 40 W -55 to 150 °C 2 °C/W 62.5 °C/W b d EAS Sigle Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range a THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Nov,14,2008 1 www.samhop.com.tw STB/P434S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA IDSS Zero Gate Voltage Drain Current VDS=32V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance VDS=VGS , ID=250uA VGS=10V , ID=30A VGS=4.5V , ID=25A VDS=10V , ID=30A Min Typ Max 40 V 1 ±100 1.3 Units 1.7 7.6 8.8 18 3 uA nA 9.2 V m ohm 11.5 m ohm S c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 1160 211 135 pF pF pF 17 ns 24 ns 59 ns 11 ns 20 nC VDS=20V,ID=30A,VGS=4.5V 10 nC VDS=20V,ID=30A, VGS=10V 2.1 nC 5 nC VDS=20V,VGS=0V f=1.0MHz c VDD=20V ID=1A VGS=10V RGEN=3.3 ohm VDS=20V,ID=30A,VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Diode Forward Voltage b VGS=0V,IS=10A 0.84 10 A 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13) Nov,14,2008 2 www.samhop.com.tw STB/P434S Ver 1.0 100 60 V G S =4V 80 I D, Drain Current(A) I D, Drain Current(A) V G S =10V V G S =3.5V 60 40 V G S =3V 20 V G S =2.5V 0 36 -55 C 24 T j=125 C 25 C 12 0 0 0.5 1 2 1.5 2.5 0 3 1.4 2.1 2.8 3.5 4.2 V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics R DS(on), On-Resistance Normalized 2.0 16 12 VGS=4.5V 8 VGS=10V 4 1 1 20 40 60 80 1.6 1.4 VGS=4.5V ID=25A 1.2 1.0 0 100 VGS=10V ID=30A 1.8 0 I D, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 75 100 125 150 T j ( °C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 1.4 50 25 Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Vth, Normalized Gate-Source Threshold Voltage 0.7 V DS, Drain-to-Source Voltage(V) 20 R DS(on)(m Ω) 48 100 125 150 Tj, Junction Temperature(° C ) 1.40 I D =250uA 1.30 1.20 1.10 1.00 0.90 0.80 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Nov,14,2008 3 www.samhop.com.tw STB/P434S Ver 1.0 60 30 Is, Source-drain current(A) I D =30A 25 RDS(on)(m Ω) 20 125 C 15 10 75 C 25 C 5 0 0 2 4 6 8 0.24 0.48 0.72 0.96 1.20 Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current V GS, Gate to Source Voltage(V) C, Capacitance(pF) 0 VSD, Body Diode Forward Voltage(V) Ciss 1200 900 600 Coss 300 Crss 5 10 15 20 25 10 VDS=20V ID=30A 8 6 4 2 0 30 0 3 6 9 12 18 21 24 27 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 1000 500 I D, Drain Current(A) Switching Time(ns) 10 V GS, Gate-to-Source Voltage(V) 1500 0 25 C 125 C 1 10 1800 0 20 100 TD(off) Tr TD(on) Tf 10 VDS=20V,ID=1A VGS=10V 1 1 3 100 R im it 10 1m 10 0u s s ms 10 0.1 100 )L DC 1 10 D ON S( V G S =10V S ingle P ulse T A =25 C 1 10 40 100 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Nov,14,2008 4 www.samhop.com.tw STB/P434S Ver 1.0 V (B R ) DS S 15V DR IV E R L V DS tp D.U.T RG + V DD - I AS 20V 0.01 tp I AS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms Figure 13a. Figure 13b. r(t),Normalized E ffective T ransient T hermal Impedance 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 t2 0.01 1. 2. 3. 4. S ingle P uls e 0.01 0.00001 0.0001 0.001 0.01 0.1 R J C (t)=r (t) * R J C R J C =S ee Datas heet T J M-T C = P * R J C (t ) Duty C ycle, D=t1/t2 1 10 S quare Wave P uls e Duration (ms ec) F igure 14. Normalized T hermal T rans ient Impedance C urve Nov,14,2008 5 www.samhop.com.tw STB/P434S Preliminary PACKAGE OUTLINE DIMENSIONS TO-220 Nov,14,2008 6 www.samhop.com.tw STB/P434S Ver 1.0 PACKAGE OUTLINE DIMENSIONS TO-263AB Nov,14,2008 7 www.samhop.com.tw STB/P434S Ver 1.0 17.5 7.67 + 0.20 5.4 + 0.2 3.5 + 0.2 32 2.6 12.40 2.35 5.60 + 0.20 5.70 15.7 + 0.2 7.2 + 0.1 3.7 + 0.2 TO-220/263AB Tube 2.6 + 0.2 5.40 + 0. 0.5 + 0.1 536 + 1 2.50 4.30 5.80 5.10 ANTISTATIC 1.70 Nov,14,2008 8 www.samhop.com.tw