SDK03N04

Green
Product
SDK03N04
S a mHop Microelectronics C orp.
Ver 1.3
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) ( Ω) Typ
400V
1.5A
3.5 @ VGS=10V
Rugged and reliable.
SOT-89 Package.
D
D
G
S
D
G
SOT-89
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
a
Limit
400
±30
Units
V
V
TA=25°C
1.5
A
TA=70°C
1.2
A
6
A
10.4
mJ
1.25
W
0.8
W
-55 to 150
°C
100
°C/W
b
d
EAS
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
TA=25°C
TA=70°C
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Jan,17,2013
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SDK03N04
Ver 1.3
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
4 Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Min
VGS=0V , ID=250uA
400
Typ
VGS= ±30V , VDS=0V
Drain-Source On-State Resistance
Forward Transconductance
VDS=10V , ID=1A
2
Max
Units
1
±100
uA
V
VDS=320V , VGS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=1A
DYNAMIC CHARACTERISTICS
CISS
COSS
CRSS
Conditions
2.9
3.5
0.7
4
4.0
nA
V
ohm
S
c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
VDS=25V,VGS=0V
f=1.0MHz
186
38
7
pF
pF
pF
13
ns
27
ns
55
ns
128
ns
6
nC
1.9
nC
2
nC
c
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VDS=200V,ID=1A,VGS=10V
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
VDS=200V,ID=1A,
VGS=10V
VDD=200V
ID=1A
VGS=10V
RGEN=25 ohm
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Diode Forward Voltage
VGS=0V,IS=1A
0.81
1
A
1.4
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 300us, Duty Cycle <
_ 2%.
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=1mH,RG=25Ω,VDD = 50V.(See Figure12)
Jan,17,2013
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SDK03N04
Ver 1.3
1.0
4.0
VGS = 10V
3.5
ID, Drain Current(A)
ID, Drain Current(A)
0.8
3.0
VGS = 6V
2.5
VGS = 5.5V
2.0
1.5
VGS = 5V
1.0
0.6
Tj=125 C
0.4
-55 C
25 C
0.2
0.5
0
0
15
10
5
0
25
20
30
0
Figure 1. Output Characteristics
6
2.2
RDS(ON), On-Resistance
Normalized
2.5
R DS(on)( Ω)
5
4
3
VGS = 10V
6
V G S =10V
I D = 1A
1.9
1.6
1.3
1.0
2
1
0.6
1.2
1.8
2.4
0.7
3.0
0
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
100
125
150
Tj, Junction Temperature ( C)
BVDSS, Normalized
Drain-Source Breakdown Voltage
V DS =V G S
I D =250uA
75
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.2
50
25
Tj( C)
ID, Drain Current (A)
Vth, Normalized
Gate-Source Threshold Voltage
5
Figure 2. Transfer Characteristics
7
0.5
4
3
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
1
2
1
75 100 125 150
Tj, Junction Temperature ( C)
1.3
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25
50
75
100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
Jan,17,2013
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SDK03N04
Ver 1.3
9.0
20.0
I D =1A
Is, Source-drain current (A)
7.5
RDS(on)( Ω)
6.0
4.5
125 C
3.0
75 C
25 C
1.5
10.0
5.0
125 C
25 C
75 C
1.0
0
0
2
4
6
8
10
0.8
1.2
1.6
2.0
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VGS, Gate to Source Voltage (V)
200
C, Capacitance (pF)
0.4
V GS, Gate-Sorce Voltage(V)
240
Ciss
160
120
80
Coss
40
Crss
0
1
20
10
0.001
0.1
6
4
2
50
0
2
4
6
8
VDS, Drain-to Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
R
DS
(O
N)
L im
10
it
1m
10
DC
0.1
0.01
40
30
V DS = 200V
I D =1A
8
0
0
ID, Drain Current (A)
0
1
10 s
s
10
0m
s
ms
s
VGS=10V
Single Pulse
TA=25 C
1
10
100
1000
VDS, Drain-Source Voltage (V)
Figure 11. Maximum Safe
Operating Area
Jan,17,2013
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SDK03N04
Ver 1.3
V (B R ) DS S
15V
DR IV E R
L
V DS
tp
D.U.T
RG
+
V DD
-
I AS
20V
0.01
tp
I AS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
Figure 12a.
10
Figure 12b.
0
r(t),Normalized Effective
Transient Thermal Impedance
D=0.5
0.2
10
0.1
-1
0.05
0.02
PDM
0.01
10
t1
-2
t2
1. RɞJA (t)=r (t) * RɞJA
2. RɞJA=See Datasheet
3. TJM-TA = P* RɞJA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (msec)
Figure 13. Normalized Thermal Transient Impedance Curve
Jan,17,2013
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SDK03N04
Ver 1.3
PACKAGE OUTLINE DIMENSIONS
SOT-89
A
B
C1
F1
F2
A1
C
H
B1
F
E
D
G
R E F.
DIME NS IONS
Milimeters
MIN.
A
A1
B
B1
C
C1
D
E
F
F1
F2
G
H
MAX.
4.60
4.25
1.70
1.50
2.60
1.20
4.40
4.05
1.50
1.30
2.40
0.89
3.00 R E F .
1.50 R E F .
0.52
1.60
0.41
0.40
1.40
0.35
5± T Y P .
0.70 R E F .
Jan,17,2013
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SDK03N04
Ver 1.3
SOT-89 Tape
B
SOT-89 Carrier Tape
C
E
A
K
G
F
H
A
D
B
J
B2
B3
B1
8± Max.
A1
12± Max.
SECTION A-A
SECTION B-B
unit:р
PACKAGE
SOP 8N
150п
A1
4.85
²0.10
B1
4.45
²0.10
B2
1.85
²0.10
C
4.0
²0.10
D
8.0
²0.10
E
B3
2.0
²0.05
0.254
²0.02
F
1.75
!²0.10
G
5.5
²0.05
H
1.50
²0.10
J
1.5
²0.25
K
10C
12.0
+0.30
.0.10
40.0
²0.20
Jan,17,2013
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