STB/P60L60A Gr Pr S a mHop Microelectronics C orp. Ver 3.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Typ 60V 65A 15 @ VGS=10V High power and current handling capability. TO-220 & TO-263 package. D D G G D S S S TB S E R IE S TO-263(DD-P AK) G S TP S E R IE S TO-220 S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage ID Drain Current-Continuous IDM EAS Gate-Source Voltage -Pulsed Avalanche Energy T C =25 °C T C =70 °C a b d a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range TC=25°C TC=70°C THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Limit Units 60 ±20 V V 65 A 54 190 A A 156 mJ 125 W 87.5 W -55 to 175 °C 1.2 62.5 °C/W °C/W Oct,13,2011 1 www.samhop.com.tw STB/P60L60A Ver 3.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body leakage current ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS DYNAMIC CISS COSS CRSS CHARACTERISTICS b Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge Typ Max Units V 60 VDS=48V , VGS=0V uA 1 ±100 nA 2.8 4 V VGS=10V , ID=32.5A 15 19 m ohm VDS=20V , ID=32.5A 48 S 2300 142 108 pF pF pF 63 71 162 ns ns ns ns nC nC nC VGS= ±20V , VDS=0V VDS=VGS , ID=250uA Drain-Source On-State Resistance Forward Transconductance SWITCHING CHARACTERISTICS tD(ON) Turn-On DelayTime tr Rise Time tD(OFF) Turn-Off DelayTime tf Fall Time VGS=0V , ID=250uA Min VDS=25V,VGS=0V f=1.0MHz 2 b VDD=30V ID=1A VGS=10V RGEN=60 ohm VDS=30V,ID=25A,VGS=10V VDS=30V,ID=25A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS VSD Diode Forward Voltage VGS=0V,IS=1A 42 28 5 11 0.75 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13) Oct,13,2011 2 www.samhop.com.tw STB/P60L60A Ver 3.0 65 100 ID, Drain Current(A) ID, Drain Current(A) VGS = 10V 80 VGS = 8V VGS = 7V 60 VGS = 6V 40 VGS = 5V 20 0 0.5 1.0 2.5 2.0 1.5 25 C -55 C 13 0 1.5 4.5 3.0 6.0 7.5 9.0 V DS, Drain-to-Source Voltage(V) V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 60 2.0 50 1.8 40 30 V G S =10V 20 10 1 Tj=125 C 26 3.0 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 39 0 0 1 20 40 60 80 V G S =10V I D =32.5A 1.6 1.4 1.2 1.0 0.8 100 0 50 25 75 100 125 150 T j ( °C ) I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 Vth, Normalized Gate-Source Threshold Voltage 52 V DS =V G S I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) 1.4 I D =250uA 1.3 1.2 1.1 1.0 0.9 0.8 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Oct,13,2011 3 www.samhop.com.tw STB/P60L60A Ver 3.0 90 60 Is, Source-drain current(A) I D = 32.5A RDS(on)(m Ω) 75 60 45 125 C 30 75 C 15 0 25 C 2 0 4 6 8 25 C 75 C 1 10 0 0.3 0.6 0.9 1.2 1.5 V GS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 3000 2500 C, Capacitance(pF) 125 C 10 Ciss 2000 1500 1000 500 Coss Crss 0 0 VDS=30V ID=25A 8 6 4 2 0 5 10 15 20 25 30 0 4 8 12 16 24 20 28 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 32 300 TD(off ) I D, Drain Current(A) Switching Time(ns) 100 TD(on) Tr Tf 10 V DS =30V,I D =1A V GS =10V R 10 0.3 0.1 100 Rg, Gate Resistance(Ω) D ON S( )L im it 10 1m 10 m DC s 0u s s 10 1 1 1 100 VGS=10V Single Pulse TC=25 C 1 10 60 V DS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Oct,13,2011 4 www.samhop.com.tw STB/P60L60A Ver 3.0 V ( BR )D S S tp L V DS D .U .T RG + - IA S VDD 20V 0.0 1 tp IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms Figure 13b. Figure 13a. r(t),Normalized Effective Transient Thermal Impedance 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 t2 0.01 1. 2. 3. 4. S ingle P uls e 0.01 0.00001 0.0001 0.001 0.01 0.1 R J C (t)=r (t) * R J C R J C =S ee Datas heet T J M-T C = P * R J C (t ) Duty C ycle, D=t1/t2 1 10 Square Wave Pulse Duration (msec) Figure 14. Normalized Thermal Transient Impedance Curve Oct,13,2011 5 www.samhop.com.tw STB/P60L60A Ver 3.0 Oct,13,2011 6 www.samhop.com.tw STB/P60L60A Ver 3.0 Oct,13,2011 7 www.samhop.com.tw