STU/D413S S a mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 48 @ VGS=10V -40V Suface Mount Package. -19A 78 @ VGS=4.5V G ESD Protected. G D S STU SERIES TO - 252AA( D - PAK ) S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID IDM EAS Drain Current-Continuous a a Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range ±20 V -19 V A T C=70°C -15 A d PD Units TC=25°C b -Pulsed Sigle Pulse Avalanche Energy Limit -40 -58 A 16 mJ TC=25°C 32 W TC=70°C 20 W -55 to 150 °C 4 °C/W 50 °C/W THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Aug,08,2008 1 www.samhop.com.tw STU/D413S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) 4 Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS CISS COSS CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Total Gate Charge Qgs Qgd Gate-Source Charge Min VGS=0V , ID=-250uA -40 Typ 1 ±10 VGS= ±20V , VDS=0V -1 uA 48 V m ohm VGS=-4.5V , ID=-7.5A 58 78 m ohm VDS=-10V , ID=-9.5A 10 S VDS=-20V,VGS=0V f=1.0MHz 895 138 67 pF pF pF 14 14 ns ns ns ns c VDD=-20V ID=-1.0A VGS=-10V RGEN=3.3 ohm 54 10 VDS=-20V,ID=-9.5A,VGS=-10V 14.5 nC VDS=-20V,ID=-9.5A,VGS=-4.5V 7 2.1 3.4 nC VDS=-20V,ID=-9.5A, VGS=-10V Gate-Drain Charge Diode Forward Voltage -3 uA -1.8 38 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Is Maximum Continuous Drain-Source Forward Current VSD Units V VDS=-32V , VGS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-9.5A Max c Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Conditions b VGS=0V,IS= -2.0A -0.77 nC nC -2.0 A -1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ _ 2%. b.Pulse Test:Pulse Width < 300us, Duty Cycle < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V .(See Figure13) Aug,08,2008 2 www.samhop.com.tw STU/D413S Ver 1.0 15 20 V G S =-4.5V V G S =-10V V G S =-5V I D, Drain Current(A) I D, Drain Current(A) 16 V G S =-4V 12 V G S =-3.5V 8 4 V G S =-3V 12 9 6 125 C 25 C 3 -55 C 0 0 0 2.0 1.5 1.0 0.5 2.5 0 3.0 V DS, Drain-to-Source Voltage(V) 100 1.8 R DS(on), On-Resistance Normalized R DS(on)(m Ω) 2.0 80 V G S =-4.5V 60 40 V G S =-10V 20 4 8 12 16 3.2 4.0 4.8 V G S =-10V I D = -9.5A 1.6 1.4 V G S =-4.5V I D =-7.5A 1.2 1.0 0 20 0 25 50 75 100 125 150 T j ( °C ) ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.2 Vth, Normalized Gate-Source Threshold Voltage 2.4 Figure 2. Transfer Characteristics 120 1 1.6 VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 1 0.8 V DS =V G S I D =-250uA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Aug,08,2008 3 www.samhop.com.tw STU/D413S Ver 1.0 120 20.0 Is, Source-drain current(A) I D =-9.5A R DS(on)(m Ω) 100 80 125 C 60 75 C 40 25 C 20 0 5.0 75 C 125 C 125 25 C 1.0 0 2 4 6 8 10 0 0.24 0.48 0.72 0.96 1.20 V GS, Gate-to-Source Voltage(V) V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 1500 1250 C, Capacitance(pF) 10.0 C is s 1000 750 500 Cos s 250 C rs s 0 0 5 10 15 20 25 V DS = -20V I D =-9.5A 8 6 4 2 0 0 30 3 6 12 9 15 18 21 24 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 600 100 60 TD(off) Tr I D, Drain Current(A) Switching Time(ns) 100 TD(on) Tf 10 V DS =-20V,ID=-1A 1 10 1 V G S =-10V 1 6 10 0.1 60 100 300 600 Rg, Gate Resistance(Ω) R ( DS ) ON L im it 10 1m 10 m DC s 0u s s V G S =-10V S ingle P ulse T A =25 C 1 10 40 100 VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Aug,08,2008 4 www.samhop.com.tw STU/D413S Ver 1.0 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 1. 2. 3. 4. 0.01 S ING LE P ULS E 0.01 10 -5 10 -4 10 -3 10 -2 10 R įJ A (t)=r (t) * R įJ A R įJ A =S ee Datas heet T J M-T A = P DM* R įJ A (t) Duty C ycle, D=t1/t2 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Aug,08,2008 5 www.samhop.com.tw STU/D413S Ver 1.0 PACKAGE OUTLINE DIMENSIONS TO-251 Aug,08,2008 6 www.samhop.com.tw STU/D413S Ver 1.0 TO-252 E A b3 C2 L3 E1 D H b2 L4 e b L2 A1 L L1 C2 b b2 b3 L2 A1 L4 L L1 L3 10 483 0.814 864 232 0.508 6.000 6.400 4.902 2.290 9.601 0.010 0.066 1.397 2.743 1.100 387 0.584 0.889 1.092 436 REF. 00 6.604 5.004 BSC 210 0.127 0.940 1.651 REF. REF. 7 0.019 32 4 6 0.020 36 0.193 0.090 78 0.0004 0.026 0.055 0.108 0.043 4 0.023 0.035 43 4 REF. 4 0.197 BSC 402 0.005 0.037 0.065 REF. REF. Aug,08,2008 7 www.samhop.com.tw STU/D413S Ver 1.0 TO251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H 2.2 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V Aug,08,2008 8 www.samhop.com.tw