SAMHOP STU413S

STU/D413S
S a mHop Microelectronics C orp.
Ver 1.0
P-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
R DS(ON) (m Ω) Max
ID
Rugged and reliable.
48 @ VGS=10V
-40V
Suface Mount Package.
-19A
78 @ VGS=4.5V
G
ESD Protected.
G
D
S
STU SERIES
TO - 252AA( D - PAK )
S
STD SERIES
TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
IDM
EAS
Drain Current-Continuous
a
a
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
±20
V
-19
V
A
T C=70°C
-15
A
d
PD
Units
TC=25°C
b
-Pulsed
Sigle Pulse Avalanche Energy
Limit
-40
-58
A
16
mJ
TC=25°C
32
W
TC=70°C
20
W
-55 to 150
°C
4
°C/W
50
°C/W
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case a
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Aug,08,2008
1
www.samhop.com.tw
STU/D413S
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
4 Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
CISS
COSS
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Min
VGS=0V , ID=-250uA
-40
Typ
1
±10
VGS= ±20V , VDS=0V
-1
uA
48
V
m ohm
VGS=-4.5V , ID=-7.5A
58
78
m ohm
VDS=-10V , ID=-9.5A
10
S
VDS=-20V,VGS=0V
f=1.0MHz
895
138
67
pF
pF
pF
14
14
ns
ns
ns
ns
c
VDD=-20V
ID=-1.0A
VGS=-10V
RGEN=3.3 ohm
54
10
VDS=-20V,ID=-9.5A,VGS=-10V
14.5
nC
VDS=-20V,ID=-9.5A,VGS=-4.5V
7
2.1
3.4
nC
VDS=-20V,ID=-9.5A,
VGS=-10V
Gate-Drain Charge
Diode Forward Voltage
-3
uA
-1.8
38
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Is
Maximum Continuous Drain-Source Forward Current
VSD
Units
V
VDS=-32V , VGS=0V
VDS=VGS , ID=-250uA
VGS=-10V , ID=-9.5A
Max
c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Conditions
b
VGS=0V,IS= -2.0A
-0.77
nC
nC
-2.0
A
-1.3
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_
_ 2%.
b.Pulse Test:Pulse Width < 300us, Duty Cycle <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 20V .(See Figure13)
Aug,08,2008
2
www.samhop.com.tw
STU/D413S
Ver 1.0
15
20
V G S =-4.5V
V G S =-10V
V G S =-5V
I D, Drain Current(A)
I D, Drain Current(A)
16
V G S =-4V
12
V G S =-3.5V
8
4
V G S =-3V
12
9
6
125 C
25 C
3
-55 C
0
0
0
2.0
1.5
1.0
0.5
2.5
0
3.0
V DS, Drain-to-Source Voltage(V)
100
1.8
R DS(on), On-Resistance
Normalized
R DS(on)(m Ω)
2.0
80
V G S =-4.5V
60
40
V G S =-10V
20
4
8
12
16
3.2
4.0
4.8
V G S =-10V
I D = -9.5A
1.6
1.4
V G S =-4.5V
I D =-7.5A
1.2
1.0
0
20
0
25
50
75
100
125
150
T j ( °C )
ID, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.2
Vth, Normalized
Gate-Source Threshold Voltage
2.4
Figure 2. Transfer Characteristics
120
1
1.6
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
1
0.8
V DS =V G S
I D =-250uA
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature( ° C )
1.15
I D =-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Aug,08,2008
3
www.samhop.com.tw
STU/D413S
Ver 1.0
120
20.0
Is, Source-drain current(A)
I D =-9.5A
R DS(on)(m Ω)
100
80
125 C
60
75 C
40
25 C
20
0
5.0
75 C
125 C
125
25 C
1.0
0
2
4
6
8
10
0
0.24
0.48
0.72
0.96
1.20
V GS, Gate-to-Source Voltage(V)
V SD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V GS, Gate to Source Voltage(V)
1500
1250
C, Capacitance(pF)
10.0
C is s
1000
750
500
Cos s
250
C rs s
0
0
5
10
15
20
25
V DS = -20V
I D =-9.5A
8
6
4
2
0
0
30
3
6
12
9
15
18
21 24
V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
600
100
60
TD(off)
Tr
I D, Drain Current(A)
Switching Time(ns)
100
TD(on)
Tf
10
V DS =-20V,ID=-1A
1
10
1
V G S =-10V
1
6 10
0.1
60 100 300 600
Rg, Gate Resistance(Ω)
R
(
DS
)
ON
L im
it
10
1m
10
m
DC s
0u
s
s
V G S =-10V
S ingle P ulse
T A =25 C
1
10
40
100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Figure 11. switching characteristics
Aug,08,2008
4
www.samhop.com.tw
STU/D413S
Ver 1.0
V ( BR )D S S
15V
tp
D R IVE R
L
VDS
D .U .T
RG
+
- VD D
IA S
A
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 13a.
F igure 13b.
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
1.
2.
3.
4.
0.01
S ING LE P ULS E
0.01
10
-5
10
-4
10
-3
10
-2
10
R įJ A (t)=r (t) * R įJ A
R įJ A =S ee Datas heet
T J M-T A = P DM* R įJ A (t)
Duty C ycle, D=t1/t2
-1
1
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Aug,08,2008
5
www.samhop.com.tw
STU/D413S
Ver 1.0
PACKAGE OUTLINE DIMENSIONS
TO-251
Aug,08,2008
6
www.samhop.com.tw
STU/D413S
Ver 1.0
TO-252
E
A
b3
C2
L3
E1
D
H
b2
L4
e
b
L2
A1
L
L1
C2
b
b2
b3
L2
A1
L4
L
L1
L3
10
483
0.814
864
232
0.508
6.000
6.400
4.902
2.290
9.601
0.010
0.066
1.397
2.743
1.100
387
0.584
0.889
1.092
436
REF.
00
6.604
5.004
BSC
210
0.127
0.940
1.651
REF.
REF.
7
0.019
32
4
6
0.020
36
0.193
0.090
78
0.0004
0.026
0.055
0.108
0.043
4
0.023
0.035
43
4
REF.
4
0.197
BSC
402
0.005
0.037
0.065
REF.
REF.
Aug,08,2008
7
www.samhop.com.tw
STU/D413S
Ver 1.0
TO251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
0.4
5.25
4.5
1.4
2.25
" A"
1.65
5.5
2~ӿ3.0
7.50
1.25
1.90
540 + 1.5
6.60
19.75
TO-252 Carrier Tape
B0
E
E2
T
E1
P1
P2
D1
K0
FEED DIRECTION
A0
D0
P0
UNIT:р
PACKAGE
TO-252
(16 р*
A0
6.96
²0.1
B0
10.49
²0.1
K0
2.79
²0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ӿ2
ӿ1.5
+ 0.1
- 0
16.0
²0.3
1.75
²0.1
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
TO-252 Reel
T
S
M
N
K
G
V
R
H
W
UNIT:р
TAPE SIZE
16 р
REEL SIZE
ӿ 330
M
ӿ330
² 0.5
N
W
ӿ97
² 1.0
17.0
+ 1.5
- 0
T
H
2.2
ӿ13.0
+ 0.5
- 0.2
K
S
10.6
2.0
²0.5
G
R
V
Aug,08,2008
8
www.samhop.com.tw