Green Product STM4639 S a mHop Microelectronics C orp. Ver 2.1 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 8.5 @ VGS=-10V -30V Suface Mount Package. -14A 13 @ VGS=-4.5V ESD Procteced SO-8 1 D 5 4 G D 6 3 S D 7 2 S D 8 1 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage ID Drain Current-Continuous IDM EAS Gate-Source Voltage TA=25°C TA=70°C a b -Pulsed Single Pulse Avalanche Energy a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range d TA=25°C TA=70°C THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Limit -30 ±20 Units V -14 A V -11.2 A -79 A 180 mJ 2.5 1.6 W -55 to 150 °C 50 °C/W W Jul,03,2014 1 www.samhop.com.tw STM4639 Ver 2.1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge Min VGS=0V , ID=-250uA -30 Typ Max Units -1 ±10 uA uA -1.7 -2.0 V V VDS= -24V , VGS=0V VGS= ±20V , VDS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-14A -0.8 7 8.5 m ohm VGS=-4.5V , ID=-11.3A 9.8 13 m ohm VDS=-10V , ID=-14A 32 S 4049 pF pF c Reverse Transfer Capacitance tD(ON) tr tD(OFF) tf Conditions VDS=-15V,VGS=0V f=1.0MHz 24 ns 68 ns 484 188 ns ns VDS=-15V,ID=-14A,VGS=-10V 95 nC VDS=-15V,ID=-14A,VGS=-4.5V 40 6 23 nC VDS=-15V,ID=-14A, VGS=-10V Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b pF c VDD=-15V ID=-1A VGS=-10V RGEN=3 ohm Fall Time 641 351 VGS=0V,IS=-2.0A -0.7 nC nC -2.0 A -1.2 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=3.0mH,VDD = 30V,VGS=10V.(See Figure13) Jul,03,2014 2 www.samhop.com.tw STM4639 Ver 2.1 25 20 VG S =-10V 15 VG S =-4.5V -ID, Drain Current (A) - ID, Drain Current(A) 20 VG S =-2.5V 15 10 VG S =-2V 5 0 10 5 -55 C 1 0 0 0.5 1 2 1.5 3 2.5 Tj=125 C 0 0.5 -VDS, Drain-to-Source Voltage (V) 2.5 3.0 1.8 RDS(ON), On-Resistance Normalized 15 RDS(on) (m W) 2.0 Figure 2. Transfer Characteristics 18 12 VG S =4.5V 9 6 VG S =10V 1.6 V G S =-10V I D =-14A 1.4 1.2 V G S =-4.5V I D =-11.3A 1.0 3 0.8 1 5 10 15 20 25 0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =-250uA 75 Tj, Junction Temperature ( C) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.6 50 25 Tj( C) -ID, Drain Current (A) Vth, Normalized Gate-Source Threshold Voltage 1.5 -V G S , G ate-to-S ource Voltage (V ) Figure 1. Output Characteristics 0 1.0 25 C 1.15 1.05 1.00 0.95 0.90 0.85 -50 100 125 150 I D =-250uA 1.10 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature Jul,03,2014 3 www.samhop.com.tw STM4639 Ver 2.1 30 20.0 25 125 C 20 75 C -Is, Source-drain current (A) RDS(on) (m W) I D =-14A 25 C 15 10 5 0 0 2 4 6 8 10.0 5.0 25 C 1.0 10 75 C 125 C 0 -VGS, Gate-Source Voltage (V) 0.3 0.6 0.9 1.2 1.5 -VSD, Body Diode Forward Voltage (V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 4800 -VGS, Gate to Source Voltage (V) C is s C, Capacitance (pF) 4000 3200 2400 1600 C os s 800 C rs s 6 4 2 0 0 0 V DS =-15V I D =-14 A 8 5 10 15 20 25 30 0 12.5 25 37.5 50 62.5 75 -VDS, Drain-to Source Voltage (V) 87.5 100 Qg, Total Gate Charge (nC) Figure 10. Gate Charge Figure 9. Capacitance 5000 1000 -ID, Drain Current (A) Switching Time (ns) 100 TD(off) Tf 100 Tr TD(on) VDS=-15V,ID=-1A VGS=-10V 10 1 3 6 10 RD it 10 10 10 1s 0m 1m ms 0u s s s DC 1 0.1 Rg, Gate Resistance (W) ( L im 10 0.1 60 100 S ) ON V G S =-10V S ingle P ulse T c=25 C 1 10 100 -VDS, Drain-Source Voltage (V) Figure 12. Maximum Safe Operating Area Figure 11.switching characteristics Jul,03,2014 4 www.samhop.com.tw STM4639 Ver 2.1 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 t1 t2 Single Pulse 0.001 0.00001 0.0001 0.001 1. 2. 3. 4. 0.01 0.1 1 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t ) Duty C ycle, D=t1/t 2 10 100 1000 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Jul,03,2014 5 www.samhop.com.tw STM4639 Ver 2.1 PACKAGE OUTLINE DIMENSIONS SO-8 D E A2 A 1 e A1 b H h X 45 O C L SYMBOLS A A1 A2 b C D E e H L h MILLIMETERS MIN MAX INCHES MIN MAX 1.75 1.35 0.25 0.10 1.63 1.25 0.51 0.31 0.17 0.25 4.80 5.00 3.70 4.00 1.27 REF. 5.80 6.20 1.27 0.40 0± 8± 0.25 0.50 0.053 0.069 0.010 0.004 0.064 0.049 0.020 0.012 0.010 0.007 0.197 0.189 0.146 0.157 0.050 BSC 0.228 0.244 0.016 0.050 8± 0± 0.020 0.010 Jul,03,2014 6 www.samhop.com.tw STM4639 Ver 2.1 SO-8 Tape and Reel Data SO-8 Carrier Tape P1 D1 P2 B0 E E2 E1 A A0 A P0 D0 TERMINAL NUMBER 1 T SECTION A-A K0 FEEDING DIRECTION unit:р PACKAGE SOP 8N 150п A0 6.50 ²0.15 B0 5.25 ²0.10 K0 D0 D1 E 2.10 ²0.10 ӿ1.5 (MIN) ӿ1.55 ²0.10 12.0 +0.3 - 0.1 M N W W1 E2 P0 P1 P2 T 1.75 ²0.10 5.5 ²0.10 8.0 ²0.10 4.0 ²0.10 2.0 ²0.10 0.30 ²0.013 H K S G R E1 SO-8 Reel UNIT:р TAPE SIZE 12 р REEL SIZE ӿ330 330 ² 1 62 ²1.5 12.4 + 0.2 16.8 - 0.4 ӿ12.75 + 0.15 V 2.0 ²0.15 Jul,03,2014 7 www.samhop.com.tw STM4639 Ver 2.1 TOP MARKING DEFINITION SO-8 STM4639 Product No. SamHop Logo XXXXXX Pin 1 Production Year (2009 = 9, 2010 = A.....) Production Month (1,2 ~ 9, A,B,C) Production Date (1,2 ~ 9, A,B.....) Wafer Lot No. SMC internal code No. (A,B,C...Z) Jul,03,2014 8 www.samhop.com.tw