STM4639

Green
Product
STM4639
S a mHop Microelectronics C orp.
Ver 2.1
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
8.5 @ VGS=-10V
-30V
Suface Mount Package.
-14A
13 @ VGS=-4.5V
ESD Procteced
SO-8
1
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
ID
Drain Current-Continuous
IDM
EAS
Gate-Source Voltage
TA=25°C
TA=70°C
a
b
-Pulsed
Single Pulse Avalanche Energy
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
d
TA=25°C
TA=70°C
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Limit
-30
±20
Units
V
-14
A
V
-11.2
A
-79
A
180
mJ
2.5
1.6
W
-55 to 150
°C
50
°C/W
W
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STM4639
Ver 2.1
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Qg
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Min
VGS=0V , ID=-250uA
-30
Typ
Max
Units
-1
±10
uA
uA
-1.7
-2.0
V
V
VDS= -24V , VGS=0V
VGS= ±20V , VDS=0V
VDS=VGS , ID=-250uA
VGS=-10V , ID=-14A
-0.8
7
8.5
m ohm
VGS=-4.5V , ID=-11.3A
9.8
13
m ohm
VDS=-10V , ID=-14A
32
S
4049
pF
pF
c
Reverse Transfer Capacitance
tD(ON)
tr
tD(OFF)
tf
Conditions
VDS=-15V,VGS=0V
f=1.0MHz
24
ns
68
ns
484
188
ns
ns
VDS=-15V,ID=-14A,VGS=-10V
95
nC
VDS=-15V,ID=-14A,VGS=-4.5V
40
6
23
nC
VDS=-15V,ID=-14A,
VGS=-10V
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
IS
VSD
Diode Forward Voltage
b
pF
c
VDD=-15V
ID=-1A
VGS=-10V
RGEN=3 ohm
Fall Time
641
351
VGS=0V,IS=-2.0A
-0.7
nC
nC
-2.0
A
-1.2
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=3.0mH,VDD = 30V,VGS=10V.(See Figure13)
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STM4639
Ver 2.1
25
20
VG S =-10V
15
VG S =-4.5V
-ID, Drain Current (A)
- ID, Drain Current(A)
20
VG S =-2.5V
15
10
VG S =-2V
5
0
10
5
-55 C
1
0
0
0.5
1
2
1.5
3
2.5
Tj=125 C
0
0.5
-VDS, Drain-to-Source Voltage (V)
2.5
3.0
1.8
RDS(ON), On-Resistance
Normalized
15
RDS(on) (m W)
2.0
Figure 2. Transfer Characteristics
18
12
VG S =4.5V
9
6
VG S =10V
1.6
V G S =-10V
I D =-14A
1.4
1.2
V G S =-4.5V
I D =-11.3A
1.0
3
0.8
1
5
10
15
20
25
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
75
100
125
150
Figure 4. On-Resistance Variation with
Drain Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
V DS =V G S
I D =-250uA
75
Tj, Junction Temperature ( C)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.6
50
25
Tj( C)
-ID, Drain Current (A)
Vth, Normalized
Gate-Source Threshold Voltage
1.5
-V G S , G ate-to-S ource Voltage (V )
Figure 1. Output Characteristics
0
1.0
25 C
1.15
1.05
1.00
0.95
0.90
0.85
-50
100 125 150
I D =-250uA
1.10
-25
0
25
50
75
100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
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STM4639
Ver 2.1
30
20.0
25
125 C
20
75 C
-Is, Source-drain current (A)
RDS(on) (m W)
I D =-14A
25 C
15
10
5
0
0
2
4
6
8
10.0
5.0
25 C
1.0
10
75 C
125 C
0
-VGS, Gate-Source Voltage (V)
0.3
0.6
0.9
1.2
1.5
-VSD, Body Diode Forward Voltage (V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
4800
-VGS, Gate to Source Voltage (V)
C is s
C, Capacitance (pF)
4000
3200
2400
1600
C os s
800
C rs s
6
4
2
0
0
0
V DS =-15V
I D =-14 A
8
5
10
15
20
25
30
0
12.5 25 37.5 50 62.5 75
-VDS, Drain-to Source Voltage (V)
87.5 100
Qg, Total Gate Charge (nC)
Figure 10. Gate Charge
Figure 9. Capacitance
5000
1000
-ID, Drain Current (A)
Switching Time (ns)
100
TD(off)
Tf
100
Tr
TD(on)
VDS=-15V,ID=-1A
VGS=-10V
10
1
3
6
10
RD
it
10
10
10
1s
0m
1m
ms
0u
s
s
s
DC
1
0.1
Rg, Gate Resistance (W)
(
L im
10
0.1
60 100
S
)
ON
V G S =-10V
S ingle P ulse
T c=25 C
1
10
100
-VDS, Drain-Source Voltage (V)
Figure 12. Maximum Safe
Operating Area
Figure 11.switching characteristics
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STM4639
Ver 2.1
V ( BR )D S S
15V
tp
D R IVE R
L
VDS
D .U .T
RG
+
- VD D
IA S
A
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 13a.
F igure 13b.
Normalized Transient
Thermal Resistance
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
P DM
0.01
t1
t2
Single Pulse
0.001
0.00001
0.0001
0.001
1.
2.
3.
4.
0.01
0.1
1
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t )
Duty C ycle, D=t1/t 2
10
100
1000
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
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STM4639
Ver 2.1
PACKAGE OUTLINE DIMENSIONS
SO-8
D
E
A2 A
1
e
A1
b
H
h X 45
O
C
L
SYMBOLS
A
A1
A2
b
C
D
E
e
H
L
h
MILLIMETERS
MIN
MAX
INCHES
MIN
MAX
1.75
1.35
0.25
0.10
1.63
1.25
0.51
0.31
0.17
0.25
4.80
5.00
3.70
4.00
1.27 REF.
5.80
6.20
1.27
0.40
0±
8±
0.25
0.50
0.053
0.069
0.010
0.004
0.064
0.049
0.020
0.012
0.010
0.007
0.197
0.189
0.146
0.157
0.050 BSC
0.228
0.244
0.016
0.050
8±
0±
0.020
0.010
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STM4639
Ver 2.1
SO-8 Tape and Reel Data
SO-8 Carrier Tape
P1
D1
P2
B0
E
E2
E1
A
A0
A
P0
D0
TERMINAL NUMBER 1
T
SECTION A-A
K0
FEEDING DIRECTION
unit:р
PACKAGE
SOP 8N
150п
A0
6.50
²0.15
B0
5.25
²0.10
K0
D0
D1
E
2.10
²0.10
ӿ1.5
(MIN)
ӿ1.55
²0.10
12.0
+0.3
- 0.1
M
N
W
W1
E2
P0
P1
P2
T
1.75
²0.10
5.5
²0.10
8.0
²0.10
4.0
²0.10
2.0
²0.10
0.30
²0.013
H
K
S
G
R
E1
SO-8 Reel
UNIT:р
TAPE SIZE
12 р
REEL SIZE
ӿ330
330
² 1
62
²1.5
12.4
+ 0.2
16.8
- 0.4
ӿ12.75
+ 0.15
V
2.0
²0.15
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STM4639
Ver 2.1
TOP MARKING DEFINITION
SO-8
STM4639
Product No.
SamHop Logo
XXXXXX
Pin 1
Production Year (2009 = 9, 2010 = A.....)
Production Month (1,2 ~ 9, A,B,C)
Production Date (1,2 ~ 9, A,B.....)
Wafer Lot No.
SMC internal code No. (A,B,C...Z)
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