2SC5101 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909) Application : Audio and General Purpose Ratings Unit ICBO VCB=200V 10max µA VCEO 140 V IEBO VEB=6V 10max µA V 140min IC=50mA VCE=4V, IC=3A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A 0.5max V PC 80(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 250typ –55 to +150 ∗hFE Rank °C pF 1.75 16.2 Tstg ø3.3±0.2 a b 3.0 hFE 3.3 V(BR)CEO A O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 5.45±0.1 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 60 12 5 10 –5 0.5 –0.5 0.24typ 4.32typ 0.40typ 4 20mA 2 10mA 0 0 1 2 3 1 2 I C =10A 0 4 0 0.5 1.0 1.5 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 Typ 100 50 1 5 125˚C 25˚C 100 –30˚C 50 20 0.02 10 Transient Thermal Resistance DC Curr ent Gain h F E 300 0.5 0 1 0.1 Collector Current I C (A) 0.5 1 5 10 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 Base-Emitter Voltage V B E (V) (V C E =4V) DC Cur rent Gain h FE 0 2.0 Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 4 5A Collector-Emitter Voltage V C E (V) 20 0.02 6 e Te mp) Temp ) 50 mA 2 (Case 75 m A 6 8 25˚C A E (V CE =4V) Cas 100m C Weight : Approx 6.5g a. Part No. b. Lot No. 10 3 ˚C ( mA 125 150 Collector Current I C (A) A 3.35 1.5 I C – V BE Temperature Characteristics (Typical) θ j - a (˚ C/W) 2 m 00 Collector-Emitter Saturation Voltage V C E (s at) (V ) 8 Collector Current I C (A) 30 A 0m IB =4 00 m A 10 4.4 B V CE ( sat ) – I B Characteristics (Typical) 0.65 +0.2 -0.1 5.45±0.1 1.5 I C – V CE Characteristics (Typical) 0.8 2.15 Temp) V 10 3.45 ±0.2 (Case 6 IC 5.5±0.2 –30˚C VEBO 15.6±0.2 23.0±0.3 Symbol 0.8±0.2 Conditions V 5.5 Unit 200 1.6 Ratings VCBO Symbol External Dimensions FM100(TO3PF) (Ta=25°C) 9.5±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 80 si nk Collector Curre nt I C (A) 40 at Without Heatsink Natural Cooling he 0.5 ite 1 60 fin C In D ith 10 5 ms s 0m 20 10 Typ 10 Cut- off F req uency f T (M H Z ) 10 30 W M aximum Power Dissipa ti on P C (W) 30 40 20 Without Heatsink 0 –0.02 –0.1 –1 Emitter Current I E (A) 128 –10 0.1 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150