SANKEN 2SC5101_01

2SC5101
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909)
Application : Audio and General Purpose
Ratings
Unit
ICBO
VCB=200V
10max
µA
VCEO
140
V
IEBO
VEB=6V
10max
µA
V
140min
IC=50mA
VCE=4V, IC=3A
50min∗
IB
4
A
VCE(sat)
IC=5A, IB=0.5A
0.5max
V
PC
80(Tc=25°C)
W
fT
VCE=12V, IE=–0.5A
20typ
MHz
Tj
150
°C
COB
VCB=10V, f=1MHz
250typ
–55 to +150
∗hFE Rank
°C
pF
1.75
16.2
Tstg
ø3.3±0.2
a
b
3.0
hFE
3.3
V(BR)CEO
A
O(50 to 100), P(70 to 140), Y(90 to 180)
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
5.45±0.1
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
60
12
5
10
–5
0.5
–0.5
0.24typ
4.32typ
0.40typ
4
20mA
2
10mA
0
0
1
2
3
1
2
I C =10A
0
4
0
0.5
1.0
1.5
h FE – I C Temperature Characteristics (Typical)
(V C E =4V)
200
Typ
100
50
1
5
125˚C
25˚C
100
–30˚C
50
20
0.02
10
Transient Thermal Resistance
DC Curr ent Gain h F E
300
0.5
0
1
0.1
Collector Current I C (A)
0.5
1
5
10
θ j-a – t Characteristics
3
1
0.5
0.1
1
10
100
1000 2000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
2
Base-Emitter Voltage V B E (V)
(V C E =4V)
DC Cur rent Gain h FE
0
2.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
0.1
4
5A
Collector-Emitter Voltage V C E (V)
20
0.02
6
e Te
mp)
Temp
)
50 mA
2
(Case
75 m A
6
8
25˚C
A
E
(V CE =4V)
Cas
100m
C
Weight : Approx 6.5g
a. Part No.
b. Lot No.
10
3
˚C (
mA
125
150
Collector Current I C (A)
A
3.35
1.5
I C – V BE Temperature Characteristics (Typical)
θ j - a (˚ C/W)
2
m
00
Collector-Emitter Saturation Voltage V C E (s at) (V )
8
Collector Current I C (A)
30
A
0m
IB
=4
00
m
A
10
4.4
B
V CE ( sat ) – I B Characteristics (Typical)
0.65 +0.2
-0.1
5.45±0.1
1.5
I C – V CE Characteristics (Typical)
0.8
2.15
Temp)
V
10
3.45 ±0.2
(Case
6
IC
5.5±0.2
–30˚C
VEBO
15.6±0.2
23.0±0.3
Symbol
0.8±0.2
Conditions
V
5.5
Unit
200
1.6
Ratings
VCBO
Symbol
External Dimensions FM100(TO3PF)
(Ta=25°C)
9.5±0.2
■Electrical Characteristics
■Absolute maximum ratings (Ta=25°C)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
80
si
nk
Collector Curre nt I C (A)
40
at
Without Heatsink
Natural Cooling
he
0.5
ite
1
60
fin
C
In
D
ith
10
5
ms
s
0m
20
10
Typ
10
Cut- off F req uency f T (M H Z )
10
30
W
M aximum Power Dissipa ti on P C (W)
30
40
20
Without Heatsink
0
–0.02
–0.1
–1
Emitter Current I E (A)
128
–10
0.1
3
5
10
50
100
Collector-Emitter Voltage V C E (V)
200
3.5
0
0
25
50
75
100
Ambient Temperature Ta(˚C)
125
150