www.fairchildsemi.com KH104 DC to 1.1GHz Linear Amplifier Features ■ ■ ■ ■ ■ ■ General Description The KH104 linear amplifier represents a significant advance in linear amplifiers. Proprietary design techniques have yielded an amplifier with 14dB of gain and a -3dB bandwidth of DC to 1100MHz. Gain flatness to 750MHz of ±0.4dB coupled with excellent VSWR and phase linearity gives outstanding pulse fidelity and low signal distortion. -3dB bandwidth of 1.1GHz 325psec rise and fall times 14dB gain, 50Ω input and output Low distortion, linear phase 1.4:1 VSWR (output, DC-1.1GHz) Direct replacement for CLC104 Applications ■ ■ ■ ■ Digital and wideband analog communications Radar, IF and RF processors Fiber optic drivers and receivers Photomultiplier preamplifiers Basic Circuit Diagram +15V 39 +15V 0.01 2.2 10K Offset Adjust -15V 0.01 0.01 12 4 Vin 3,5-10 14 1 KH104 11 2 13 0.01 Capacitance if µF 2.2 39 0.01 -15V Equivalent Circuit Diagram 1 * -25°C to +85°C 14-pin double-wide DIP 14 +VR Offset Adjust 12 4 These same characteristics make the KH104 an excellent choice for use in fiber optics systems, on either the transmitting or receiving end of the fiber. The low group delay distortion insures that pulse integrity will be maintained. As a photomultiplier tube preamp, its fast response and quick overload recovery provide for superior system performance. KH104AI +5.4V Reg Vin Fast rise time, low overshoot and linear phase make the KH104 ideal for high speed pulse amplification. These properties plus low distortion combine to produce an amplifier well suited to many communications applications. With a 1.1GHz bandwidth, the KH104 can handle the fastest digital traffic, even when the demodulation scheme or the digital coding format requires that DC be maintained. It is also ideal for traditional video amplifier applications such as radar or wideband analog communications systems. The KH104 is constructed using thin film resistor/ bipolar transistor technology, and is available in the following versions: +VCC Ground Vo Designed for 50Ω systems, the KH104 is very easy to use, requiring only properly bypassed power supplies for operation. This translates to time and cost savings in all stages of design and production. KH104 11 Vo 13 -VR -5.4V Reg 2 *Pins 3, 5-10 case is ground REV. 1A February 2001 DATA SHEET KH104 KH104 Electrical Characteristics (TA = +25°C, VCC = ±15V, RL = 50Ω, Rs = 50Ω; unless specified) PARAMETERS CONDITIONS Ambient Temperature KH104AI +25°C Min 0dBm out 10dBm out @ 100MHz DC - 750MHz DC - 600MHz 1100 1050 14.2 ±0.4 1.5 600 1000 FREQUENCY DOMAIN RESPONSE ✝ -3dB bandwidth ✝ ✝ non-inverting gain (note 1) gain flatness linear phase deviation group delay reverse isolation input return loss output return loss TIME DOMAIN RESPONSE rise and fall time (10% to 90%) settling time to 0.8% overshoot overload recovery NOISE AND DISTORTION RESPONSE ✝ 2nd harmonic distortion ✝ 3rd harmonic distortion ✝ 2nd harmonic distortion ✝ 3rd harmonic distortion 3rd order intermolulation intercept 2-tone, 1MHz separation equivalent input noise voltage noise figure usable dynamic range STATIC, DC PERFORMANCE input bias current input bias current (drift) output offset voltage output offset voltage (drift) * supply current supply rejection ratio TYP DC - 750MHz 750MHz - 1100MHz DC - 750MHz 750MHz - 1100MHz DC - 750MHz 750MHz - 1100MHz 40 35 18 11 17 10 1V step 2V step 1V step 1V step Vinpeak = ±0.5V 325 375 1.2 3 1.2 0dBm, 100MHz 0dBm, 100MHz 10dBm, 100MHz 10dBm, 100MHz 100MHz 500MHz 10Hz to 1200MHz 100MHz 500MHz 47 53 40 43 26 17 55 11 71 65 note 2 note 2 note 3 note 3 no load 1KHz 80 0.6 50 375 54 55 MIN & MAX RATINGS 13.8 -0.6 UNITS SYM MHz MHz dB dB ° ps SSBW SSBW dB dB dB dB dB dB RINI RIIN ps ps ns % ns TRS TRL TS OS OR -dBc -dBc -dBc -dBc +dBm HD2 HD3 HD2 HD3 Max 14.9 +0.6 3 375 450 1.6 30 35 LPD GD dB dB dB dB 280 2.0 250 625 60 µA µA/°C mV µV/°C mA dB IBN IBN ICC PSRR Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are determined from tested parameters. Absolute Maximum Ratings VCC Io input voltage junction temperature operating temperature storage temperature 2 Notes ±9V to ±16V ±40mA ±0.5V +175°C AI: -25°C to +85°C -65°C to +150°C 1. Nominal gain only - gain variation over temperature is ±0.1dB. 2. Input offset voltage = (input bias current) x (Rs || 50Ω). 3. Output offset can be adjusted to zero with an external potentiometer – see “Reducing DC Offset”. 4. * AI 100% tested at 25°C. ✝ AI Sample tested at 25°C. REV. 1A February 2001 KH104 DATA SHEET KH104 Performance Characteristics (TA = +25°C, VCC = ±15V, RL = 50Ω, Rs = 50Ω; unless specified) Forward Gain and Phase Reverse Gain and Phase 16 Input Return Loss 0 180 Po = 0dBm 360 0 180 20 Po = 0dBm 520 780 1.04G 40 0 |S12| -360 60 540 80 8 260 |S12| (-dB) |S21| (dB) 10 ∠S12 1.3G 0 260 Frequency (MHz) 520 780 1.04G ∠S12 (deg) -180 ∠S21 (deg) 12 0 20 0 ∠S21 |S11| (-dB) |S21| 14 40 -180 60 -360 80 0 1.3G 260 520 Frequency (MHz) Output Return Loss 780 1.04G 1.3G Frequency (MHz) Pulse Response 2nd and 3rd Harmonic Distortion 0 -20 Po = 0dBm 60 Output Distortion (dBc) Input (40mV/div) 40 Output (200mV/div) Input 20 |S22| (-dB) -30 -40 -50 2nd -60 3rd -70 80 -80 0 260 520 780 1.04G 500ps/div 1.3G 1M 100k 10M 20 15 10 5 -130 Power Output (dBm) 25 Noise Level (dBm/Hz) Intercept Point (dBm) 16 -120 -140 -150 -160 400 600 800 1k 10 1000 100k 10M 60 68 50 66 64 62 60 Frequency (MHz) REV. 1A February 2001 1000 800 600 1000 Relative Bandwidth vs. Case Temp. 105 40 30 100 95 90 85 Pd = 1.6W ΘCA = 30°C/W 80 10 800 400 Frequency (MHz) 20 600 200 0 1G Relative Bandwidth (%) 70 400 4 Power Supply Rejection Ratio 70 PSRR (dB) Dynamic Range (dB) Usable Dynamic Range 72 200 8 Frequency (Hz) Frequency (MHz) 0 12 0 -170 0 200 1G -1dB Gain Compression Noise Spectral Density 2-Tone, 3rd Order Intermod. Intercept 30 0 100M Frequency (Hz) Frequency (MHz) 1 10 100 1k 10k Frequency (Hz) 100k 1M 0 20 40 60 80 100 120 140 Case Temperature (°C) 3 DATA SHEET KH104 PC Board Layout Considerations Proper layout of printed circuit boards is important to achieve optimum performance of a circuit operating in the 1GHz frequency range. Use of microstripline is recommended for all signal-carrying paths and low resistance, low inductance signal return and bypass paths should be used. To keep the impedance of these paths low, use as much ground plane as possible. Ground plane also serves to increase the flow of heat out of the package. +15V 39 +15V 0.01 2.2 10K Offset Adjust -15V 0.01 0.01 14 12 4 Vin 1 KH104 3,5-10 11 Vo 2 13 0.01 Capacitance if µF The KH104 has three types of connections: signal paths (input and output), DC inputs (supplies and offset adjust), and grounds. 50Ω microstrip is recommended for connection to the input (pin 4) and output (pin 11). Microstrip on a doublesided PC board consists of a ground plane on one side of the board and a constantwidth signal-carrying trace on the other side of the board. For 1/16” G10 or FR-4 PC board material, a 0.1” wide trace will have a 50Ω characteristic impedance. The ground plane beneath the signal trace must extend at least one trace width on either side of the trace. Also, all traces (including ground) should be kept at least one trace width from the signal carrying traces. To keep power supply noise and oscillations from appearing at the amplifier output, all supply pins should be capacitively bypassed to ground. The power supply pins (1 and 2) are the inputs to a pair of voltage regulators whose outputs are at pins 13 and 14. It is recommended that 0.01µF or larger ceramic capacitors be connected from pins 1, 2, 13 and 14 to ground, within 0.2” of the pins. A 1µF or larger solid tantalum capacitor to ground is required within 3” of pins 1 and 2, and for good low frequency performance, solid tantalum capacitors of at least 15µF should be connected from pins 13 and 14 to ground within 3” of the pins. Use 0.025” or wider traces for the supply lines. The offset adjust pin (12) also requires bypassing; a 0.01µF or larger ceramic capacitor to ground within 0.2” of the pin is recommended. 2.2 39 -15V Figure 1: Basic Circuit If lower offset and offset drift are required, a low frequency op amp may be used in conjunction with the KH104 in a composite configuration. The suggested circuit appears in Figure 2. Its method of operation is to compare an attenuated version of the output signal to the input signal and apply a correcting voltage at the offset adjust pin. A compensation capacitor Cs reduces the bandwidth of the op amp correction circuit to limit the op amp’s effect on the KH104 to frequencies below f45, the frequency at which the op amp has 45dB of open loop gain. Using an LM108, f45 is about 7Hz with Cs = 0.1µF. Thus the op amp can correct DC and low frequency errors below f45, without affecting KH104 performance above f45. Also note that the noise performance of the op amp will dominate below f45. 12 +15V Reducing DC Offset DC offset of the KH104 may be adjusted by applying a DC voltage to the amplifier’s offset adjust pin (12). The simplest method is shown in Figure 1. Using this method of offset adjust it is possible to vary the output offset by approximately ±400mV. This simple adjustment has no effect on the offset drift characteristics of the KH104. 4 Vin 4 KH104 0.01 11 Vo RL 50Ω 49.9k 0.01 2k Rc 9.76k 7 2 6 LM108 8 Grounding is the final layout consideration. Pins 3 and 510 should all be connected to a ground plane which should cover as much of one side of the board around the amplifier as possible. 0.01 Cs 0.01 Ra 11.8k 3 Rb 1k 4 0.01 Capacitance in µF Rc = (Ra + Rb ) || 49.9k -15V Figure 2: Composite Amplifier With an LM108 op amp in this composite configuration, input offset is typically 2mV and drift is 15mV/°C. At frequencies well below f45, the composite gain is equal to (1 + 49.9k/(Ra + Rb)) and the output impedance is REV. 1A February 2001 KH104 very low. As the signal frequency increases beyond f45, the op amp loses influence and the KH104 gain and output impedance dominate. To ensure a smooth transition and matched gain at all frequencies, adjust Rb for a minimum op amp output swing with a 0.1Vpp sinewave input (to the KH104) at the frequency f45. Since the KH104 has a 50Ω output impedance, its output voltage is a function of the load impedance _ 10RL/(RL + 50)), whereas the gain of the compos(Av ~ ite amplifier at low frequencies and DC is relatively independent of the load impedance, due to the high open-loop gain of the op amp. Thus, to avoid gain mismatching and phase non-linearity, use the composite amplifier only if the load impedance is constant from DC to at least 10(f45). Use of a composite amplifier reduces input offset voltage and its corresponding drift, but has no effect on input bias current. This current is converted to an input voltage by the resistance to ground seen at the amplifier input and the voltage appears, amplified, at the output. Typical input offset voltage due to the bias current is 2mV and input offset drift is approximately 15mV/°C. Thermal Considerations The KH104 case must be maintained at or below 140°C. Note that because of the amplifier design, power dissipation remains fairly constant, independent of the load or drive level. Therefore, standard derating is not possible. There are two ways to keep the case temperature low. The first is to keep the amount of power dissipated inside the package to a minimum and the second is to get the heat out of the package quickly by reducing the thermal resistance from case to ambient. A large portion of the heat dissipated inside the package is in the voltage regulators. At the minimum +9V supply level the regulators dissipate 390mW and at the maximum ±16V supply level they dissipate 1.2W. The amplifier itself dissipates a fairly constant 600mW (55mA x 10.8V). Reducing the power dissipation of the internal regulators will go far towards reducing the internal junction temperatures without impacting the so performance. Reducing either the input supply voltages (on pins 1 and 2) and/or shunting the regulator current through external resistors (from pins 1 to 14 and pins 2 to 13) are both effective means towards significantly reducing the internal power dissipation. A minimum REV. 1A February 2001 DATA SHEET voltage across the regulator of 3.6V and a minimum regulator current of 10mA will satisfy the regulator dropout voltage and current limits. Given the maximum anticipated power supply voltages, the shunt resistor should be calculated to yield a 35mA current from that voltage to the regulated voltage of 5.4V. This will leave 10mA through the regulator at the minimum quiescent current of 45mA. The regulator input voltages may be reduced directly by dropping the voltage supplies, or, if that option is not available, using either a zener or resistive dropping element in series with the supply. If a series dropping element is used, the decoupling capacitors must appear on pins 1 and 2 of the KH104. Figure 3 shows two possible power reduction circuits from fixed ±15V supplies. Several methods of decreasing the thermal resistance from case to ambient are possible. With no heat paths other than still air at 25°C, the thermal resistance from case to ambient for the KH104 is about 40°C/W. When placed in a printed circuit board with all ground pins soldered into a ground plane 1” X 1.5”, the thermal resistance drops to about 30°C/W In this configuration, the case rise will be 30°C for 9V supplies and 50°C for 16V supplies. This results in maximum allowable ambient temperatures of 110°C and 90°C, respectively. If higher operating temperatures are required, heat sinking of the package is recommended. +15V +15V D1 5.6V 2.2µF + 0.01µF 60Ω 2.2µF 115Ω + 0.01µF 200Ω 1 1 14 13 Vin Vo 14 13 Vin 2 2 200Ω 115Ω 2.2µF + 0.01µF Vo D2 5.6V -15V D1, D2 IN4734 nominal, no load Pd ~ – 760mW 2.2µF + 0.01µF 60Ω -15V nominal, no load Pd ~ – 900mW Figure 3: Reducing Power Dissipation 5 DATA SHEET KH104 KH104 Package Dimensions 0.140 – 0.180 (3.56 – 4.57) 0.060 R (TYP) 0.016 – 0.020 (0.41 – 0.51) 0.740 – 0.760 (18.80 – 19.30) 0.740 – 0.760 (18.80 – 19.30) 0.240 – 0.260 (6.10 – 6.60) 0.590 – 0.610 (14.99 – 15.49) 0.090 – 0.110 (2.29 – 2.79) 0.590 – 0.610 (14.99 – 15.49) 0.050 R (TYP) DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICES TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. © 2001 Fairchild Semiconductor Corporation This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.