SAVANTIC 2N3771

SavantIC Semiconductor
Product Specification
2N3771 2N3772
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High power and high current capability
APPLICATIONS
·For linear amplifiers, series pass regulators
and inductive switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
2N3771
2N3772
2N3771
2N3772
2N3771
2N3772
Open emitter
Open base
Open collector
VALUE
50
100
40
60
5
7
2N3771
30
2N3772
20
IC
Collector current
ICM
Collector current-peak
IB
Base current
IBM
Base current-peak
PD
Total Power Dissipation
Tj
Junction temperature
200
Tstg
Storage temperature
-65~200
30
2N3771
7.5
2N3772
5.0
TC=25
UNIT
V
V
V
A
A
A
15
A
150
W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.17
UNIT
/W
SavantIC Semiconductor
Product Specification
2N3771 2N3772
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat-1
VCEsat-2
VBE
ICEO
PARAMETER
Collector-emitter
sustaining voltage
Collector-emitter
saturation voltge
Collector-emitter
saturation voltage
CONDITIONS
2N3771
IEBO
hFE-1
hFE-2
fT
Is/b
MAX
V
60
2N3771
IC=15A ;IB=1.5A
2.0
2N3772
IC=10A ;IB=1.0A
1.4
2N3771
IC=30A; IB=6A
2N3772
IC=20A; IB=4A
2N3771
IC=15A ; VCE=4V
2.7
2N3772
IC=10A ; VCE=4V
2.2
2N3771
VCE=30V; IB=0
2N3772
VCE=50V; IB=0
V
4.0
V
V
Base-emitter on voltage
10
mA
VCE=50V; VBE(off)=1.5V
VCE=30V TC=150
VCE=100V; VBE(off)=1.5V
VCE=45V TC=150
2.0
10.0
5.0
10.0
mA
2N3771
VCB=50V; IE=0
2.0
2N3772
VCB=100V; IE=0
5.0
2N3771
VEB=5V; IC=0
2N3772
VEB=7V; IC=0
2N3771
IC=15A ; VCE=4V
2N3772
IC=10A ; VCE=4V
2N3771
IC=30A ; VCE=4V
2N3772
IC=20A ; VCE=4V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
mA
Emitter cut-off current
5.0
DC current gain
15
mA
60
5
DC current gain
Transition frequency
Second breakdown energy
with base forward biased
UNIT
40
2N3772
2N3772
ICBO
TYP.
IC=0.2A ;IB=0
2N3771
ICEV
MIN
IC=1.0A ; VCE=4V;f=50kHz
2N3771
2N3772
VCE=40Vdc,t=1.0s,
Nonrepetitive
VCE=60Vdc,t=1.0s,
Nonrepetitive
2
0.2
MHz
3.75
A
2.5
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
2N3771 2N3772
SavantIC Semiconductor
Product Specification
2N3771 2N3772
Silicon NPN Power Transistors
4