SAVANTIC 2N6264

SavantIC Semiconductor
Product Specification
2N6263 2N6264
Silicon NPN Power Transistors
DESCRIPTION
·With TO-66 package
·High breakdown voltage
·Low collector saturation voltage
APPLICATIONS
·A wide variety of medium-to-high power,
high-voltage applications
·Series and shunt regulators
·High-fidelity amplifiers
·Power switching circuits
·Solenoid drivers
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
2N6263
2N6264
2N6263
2N6264
VALUE
140
Open emitter
170
120
Open base
150
Open collector
UNIT
V
V
7
V
IC
Collector current
3
A
ICM
Collector current-peak
4
A
IB
Base current
2
A
PT
Total power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-65~200
2N6263
2N6264
20
TC=25
50
W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
MAX
2N6263
8.75
2N6264
3.5
UNIT
/W
SavantIC Semiconductor
Product Specification
2N6263 2N6264
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBE
ICEX
ICEO
IEBO
hFE-1
PARAMETER
Collector-emitter
sustaining voltage
Collector-emitter
saturation voltage
CONDITIONS
2N6263
Is/b
MAX
V
150
2N6264
2N6263
UNIT
120
IC=0.5A; IB=0.05A
1.2
V
2N6264
IC=1.0A; IB=0.1A
0.5
2N6263
IC=0.5A ; VCE=4V
2.0
2N6264
IC=1.0A ; VCE=2V
1.5
2N6263
VCE=120V; VBE(off)=-1.5V
TC=150
2
10
2N6264
VCE=150V; VBE(off)=-1.5V
TC=150
0.05
1.0
2N6263
VCE=100V;IB=0
5
2N6264
VCE=130V;IB=0
1
2N6263
VEB=5V; IC=0
2
2N6264
VEB=7V; IC=0
0.2
2N6263
IC=0.5 A ; VCE=4V
20
100
2N6264
IC=1A ; VCE=2V
20
60
V
Base -emitter on voltage
Collector cut-off current
Collector cut-off current
mA
mA
mA
Emitter cut-off current
DC current gain
DC current gain
3
IC=3A ; VCE=2V
2N6264
fT
TYP.
IC=0.1 A ; IB=0
2N6263
hFE-2
MIN
Transition frequency
Second
breakdown
collector current with
base forward biased
5
IC=0.2A ; VCE=4V
2N6263
2N6264
VCE=120Vdc,t=1.0s,
Nonrepetitive
2
200
KHz
0.167
A
0.417
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2N6263 2N6264