SavantIC Semiconductor Product Specification 2N6260 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Low saturation voltage ·Wide safe operating area APPLICATIONS ·Power switching circuits ·High-fidelity amplifers ·Solenoid drivers ·Series and shunt-regulator driver and output stages PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 40 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 4 A IB Base current 2 A PT Total power dissipation 29 W Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 3.5 UNIT /W SavantIC Semiconductor Product Specification 2N6260 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ; IB=0 VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.15A 1.5 V VBE Base -emitter on voltage IC=1.5A ; VCE=2V 1.5 V ICEV Collector cut-off current VCE=40V;VBE(off)=-1.5V TC=150 0.5 1.0 mA ICEO Collector cut-off current VCE=30V; IB=0 0.5 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.2 mA hFE-1 DC current gain IC=4A ; VCE=2V 5 hFE-2 DC current gain IC=1.5A ; VCE=2V 20 2 MIN TYP. MAX 80 UNIT V 100 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2N6260