SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA636 2SA636A DESCRIPTION ·With TO-202 package ·Complement to type 2SC1098/1098A ·High breakdown voltage ·High transition frequency APPLICATIONS ·For audio frequency power amplifier and low speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-202) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage CONDITIONS Open emitter 2SA636 Emitter-base voltage UNIT -70 V -45 Open base 2SA636A VEBO VALUE V -60 Open collector -5 V IC Collector current -3 A ICM Collector current-peak -5 A IB Base current -0.6 A PT Total power dissipation TC=25 10 Ta=25 1.2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA636 2SA636A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEsat Collector-emitter saturation voltage VBEsat TYP. MAX UNIT IC=-1.5A ;IB=-0.15A -0.5 -2.0 V Base-emitter saturation voltage IC=-1.5A ;IB=-0.15A -0.8 -2.0 V ICBO Collector cut-off current VCB=-45V; IE=0 -1 µA IEBO Emitter cut-off current VEB=-3V; IC=0 -1 µA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 DC current gain IC=-0.5A ; VCE=-5V 40 COB Output capacitance IE=0; VCB=-10V;f=1MHz 60 pF fT Transition frequency IC=-0.1A ; VCB=-5V 45 MHz hFE-2 classifications N M L K 40-60 50-100 80-160 120-250 2 MIN 250 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA636 2SA636A PACKAGE OUTLINE Fig.2 outline dimensions 3