2SA634 - Savantic

SavantIC Semiconductor
Product Specification
2SA634
Silicon PNP Power Transistors
DESCRIPTION
·With TO-202 package
·Complement to type 2SC1096
·High current capability
APPLICATIONS
·Audio frequency power amplifier
·Low speed switching
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-40
V
VCEO
Collector-emitter voltage
Open base
-30
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-3.0
A
ICM
Collector current-peak
-6.0
A
IB
Base current
-0.6
A
PT
Total power dissipation
Ta=25
1.2
W
TC=25
10
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SA634
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEsat
Collector-emitter saturation voltage
IC=-3.0A ;IB=-0.3 A
-0.7
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-3.0A ;IB=-0.3 A
-1.1
-2.0
V
Collector-emitter breakdown voltage
IC=10mA; IB=0
-30
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
20
hFE-2
DC current gain
IC=-1A ; VCE=-5V
40
ICBO
Collector cut-off current
VCB=-30V; IE=0
-1.0
µA
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-1.0
µA
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
75
pF
fT
Transition frequency
IC=-0.1A ; VCE=-5V
55
MHz
V(BR)CEO
hFE-2 Classifications
N
M
L
K
40-60
50-100
80-160
120-250
2
V
250
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SA634