Inchange Semiconductor Product Specification 2SA634 Silicon PNP Power Transistors DESCRIPTION ·With TO-202 package ·Complement to type 2SC1096 ·High current capability APPLICATIONS ·Audio frequency power amplifier ·Low speed switching PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-202) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -40 V VCEO Collector-emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -3.0 A ICM Collector current-peak -6.0 A IB Base current -0.6 A PT Total power dissipation B Ta=25℃ 1.2 W TC=25℃ 10 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SA634 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-3.0A ;IB=-0.3 A -2.0 V VBEsat Base-emitter saturation voltage IC=-3.0A ;IB=-0.3 A -2.0 V Collector-emitter breakdown voltage IC=10mA; IB=0 -30 hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 DC current gain IC=-1A ; VCE=-5V 40 ICBO Collector cut-off current VCB=-30V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1.0 μA COB Output capacitance IE=0; VCB=-10V;f=1MHz 75 pF fT Transition frequency IC=-0.1A ; VCE=-5V 55 MHz V(BR)CEO hFE-2 Classifications N M L K 40-60 50-100 80-160 120-250 2 V 250 Inchange Semiconductor Product Specification 2SA634 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3