SavantIC Semiconductor Product Specification 2SA715 Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SC1162 APPLICATIONS ·Low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -35 V VCEO Collector-emitter voltage Open base -35 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -2.5 A ICM Collector current-Peak -3 A PC Collector power dissipation Ta=25 0.75 TC=25 10 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SA715 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; RBE=: -35 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -35 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V Collector-emitter saturation voltage IC=-2.0A ;IB=-0.2A(Pulse test) -0.5 -1.0 V VBE Base-emitter voltage IC=-1.5A;VCE=-2V(Pulse test) -1.0 -1.5 V ICBO Collector cut-off current VCB=-35V; IE=0 -20 µA hFE-1 DC current gain IC=-0.5A ; VCE=-2V 60 hFE-2 DC current gain IC=-1.5A ; VCE=-2V(Pulse test) 20 Transition frequency IC=-0.2A ; VCE=-2V(Pulse test) VCEsat fT CONDITIONS hFE-1 Classifications B C D 60-120 100-200 160-320 2 MIN TYP. MAX UNIT 320 160 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SA715 SavantIC Semiconductor Product Specification 2SA715 Silicon PNP Power Transistors 4