SAVANTIC 2SA900

SavantIC Semiconductor
Product Specification
2SA900
Silicon PNP Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SC1568
·Low collector saturation voltage
APPLICATIONS
·For audio frequency power amplifier
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute Maximun Ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-20
V
VCEO
Collector-emitter voltage
Open base
-18
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-1
A
ICM
Collector current-peak
-2
A
PC
Collector power dissipation
1.2
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SA900
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA;IB=0
-18
V
V(BR)CBO
Collector-base breakdown voltage
IC=-10µA ;IE=0
-20
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-10µA ;IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-1A ;IB=-50mA
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-500mA ;IB=-50mA
-1.2
V
ICBO
Collector cut-off current
VCB=-10V; IE=0
-1
µA
ICEO
Collector cut-off current
VCE=-18V; IB=0
-10
µA
hFE-1
DC current gain
IC=-500mA ; VCE=-2V
90
hFE-2
DC current gain
IC=-1.5A ; VCE=-2V
50
COB
Output capacitance
IE=0 ; VCB=-6V;f=1MHz
40
pF
fT
Transition frequency
IE=50mA ; VCB=-6V
200
MHz
hFE-1 Classifications
Q
R
S
T
U
90-155
130-210
180-280
250-360
330-470
2
MIN
TYP.
MAX
UNIT
470
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SA900