SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A DESCRIPTION ·With TO-126 package ·Complement to type 2SB649/649A ·High breakdown voltage VCEO:120/160V ·High current 1.5A ·Low saturation voltage,excellent hFE linearity APPLICATIONS ·For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SD669 VCBO Collector-base voltage 120 Open base 2SD669A VEBO Emitter-base voltage IC V 180 2SD669 Collector-emitter voltage UNIT 180 Open emitter 2SD669A VCEO VALUE V 160 Open collector 5 V Collector current (DC) 1.5 A ICM Collector current-peak 3 A PD Total power dissipation Ta=25 1 TC=25 20 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO PARAMETER CONDITIONS 2SD669 Collector-emitter breakdown voltage MIN TYP. MAX 120 IC=10mA; RBE=B V 160 2SD669A 2SD669 Collector-base breakdown voltage UNIT 180 IC=1m A ;IE=0 2SD669A V 180 Emitter-base breakdown voltage IE=1mA ;IC=0 Collector-emitter saturation voltage IC=0.5A ;IB=50mA 1.0 V VBE Base-emitter on voltage IC=150mA ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=160V; IE=0 10 µA hFE-1 DC current gain VCEsat 2SD669 fT COB 60 320 60 200 DC current gain IC=0.5A ; VCE=5V Transition frequency IC=150mA ; VCE=5V 140 MHz Collector output capacitance f=1MHz ; VCB=10V 14 pF hFE Classifications hFE-1 V IC=150mA ; VCE=5V 2SD669A hFE-2 5 B C D 2SB649 60-120 100-200 160-320 2SB649A 60-120 100-200 2 30 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD669 2SD669A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A 4 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 5 2SD669 2SD669A