ISC 2SA1489

Inchange Semiconductor
Product Specification
2SA1489
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3PN package
·Complement to type 2SC3853
APPLICATIONS
·Audio and general purpose
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-80
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-6
A
IB
Base current
-3
A
PC
Collector power dissipation
60
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
B
TC=25℃
Inchange Semiconductor
Product Specification
2SA1489
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2A; IB=-0.2A
-1.5
V
ICBO
Collector cut-off current
VCB=-80V; IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-100
μA
hFE
DC current gain
IC=-2A ; VCE=-4V
Transition frequency
IC=0.5A ; VCE=-12V
fT
CONDITIONS
MIN
TYP.
MAX
-80
UNIT
V
50
20
MHz
0.25
μs
0.5
μs
0.1
μs
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-3A;RL=10Ω
IB1=-IB2=-0.3A
VCC=30V
2
Inchange Semiconductor
Product Specification
2SA1489
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3