Inchange Semiconductor Product Specification 2SA1489 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SC3853 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -6 A IB Base current -3 A PC Collector power dissipation 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification 2SA1489 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -100 μA hFE DC current gain IC=-2A ; VCE=-4V Transition frequency IC=0.5A ; VCE=-12V fT CONDITIONS MIN TYP. MAX -80 UNIT V 50 20 MHz 0.25 μs 0.5 μs 0.1 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=-3A;RL=10Ω IB1=-IB2=-0.3A VCC=30V 2 Inchange Semiconductor Product Specification 2SA1489 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3