SAVANTIC 2SA886

SavantIC Semiconductor
Product Specification
2SA886
Silicon PNP Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SC1847
·Low collector-emitter saturation voltage
APPLICATIONS
·For low-frequency power amplification
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute Maximun Ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-50
V
VCEO
Collector-emitter voltage
Open base
-40
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-1.5
A
ICM
Collector current-peak
-3.0
A
1
1.2*
PC
Collector power dissipation
TC=25
W
2
5*
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
Note) *1: Without heat sink
*2: With a 100 × 100 × 2 mm A1 heat sink
SavantIC Semiconductor
Product Specification
2SA886
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-2mA;IB=0
-40
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-50
V
VCEsat
Collector-emitter saturation voltage
IC=-1.5A ;IB=-0.15A
-1.0
V
VBEsat
Base-emitter saturation voltage
IC=-2A ;IB=-0.2A
-1.5
V
ICBO
Collector cut-off current
VCB=-20V; IE=0
-1
µA
ICEO
Collector cut-off current
VCE=-10V; IB=0
-100
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
µA
hFE
DC current gain
IC=-1A ; VCE=-5V
COB
Output capacitance
IE=0 ; VCB=-20V;f=1MHz
45
pF
fT
Transition frequency
IC=0.5A ; VCB=-5V,f=200MHz
150
MHz
hFE Classifications
Q
R
80-160
120-220
2
MIN
TYP.
80
MAX
UNIT
220
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SA886
SavantIC Semiconductor
Product Specification
2SA886
Silicon PNP Power Transistors
4