Inchange Semiconductor Product Specification 2SA886 Silicon PNP Power Transistors · DESCRIPTION ·With TO-126 package ·Complement to type 2SC1847 ·Low collector-emitter saturation voltage APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute Maximun Ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -50 V VCEO Collector-emitter voltage Open base -40 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -1.5 A ICM Collector current-peak -3.0 A 1.2*1 PC Collector power dissipation TC=25℃ W 5*2 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink Inchange Semiconductor Product Specification 2SA886 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-2mA;IB=0 -40 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -50 V VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -1.0 V VBEsat Base-emitter saturation voltage IC=-2A ;IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-20V; IE=0 -1 μA ICEO Collector cut-off current VCE=-10V; IB=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-1A ; VCE=-5V COB Output capacitance IE=0 ; VCB=-20V;f=1MHz 45 pF fT Transition frequency IC=0.5A ; VCB=-5V,f=200MHz 150 MHz CONDITIONS R 80-160 120-220 TYP. B hFE Classifications Q MIN 2 80 MAX UNIT 220 Inchange Semiconductor Product Specification 2SA886 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SA886 Silicon PNP Power Transistors 4