SavantIC Semiconductor Product Specification 2SC3299 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Complement to type 2SA1307 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A IB Base current 1 A PC Collector power dissipation TC=25 20 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC3299 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.15A 0.4 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.15A 1.2 V ICBO Collector cut-off current VCB=50V ;IE=0 1.0 µA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 µA hFE-1 DC current gain IC=1A ; VCE=1V 70 hFE-2 DC current gain IC=3A ; VCE=1V 30 Cob Output capacitance IE=0 ; VCB=10V,f=1MHz 80 pF fT Transition frequency IC=1A ; VCE=4V 120 MHz 0.1 µs 1.0 µs 0.1 µs 50 UNIT V 240 Switching times ton Turn-on time ts Storage time tf Fall time IC=3A ;IB1=0.15A IB2=-0.15A,VCC=30V RL=10A hFE-1 Classifications O Y 70-140 120-240 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SC3299 SavantIC Semiconductor Product Specification 2SC3299 Silicon NPN Power Transistors 4