SavantIC Semiconductor Product Specification 2SD1445 2SD1445A Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Complement to type 2SB948/948A ·High speed switching ·Low collector saturation voltage APPLICATIONS ·For power amplification,power switching and low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SD1445 VCBO Collector-base voltage 20 Open base 2SD1445A VEBO V 50 2SD1445 Collector-emitter voltage Emitter-base voltage UNIT 40 Open emitter 2SD1445A VCEO VALUE V 40 Open collector 5 V IC Collector current 10 A ICM Collector current-peak 20 A PC Collector power dissipation Ta=25 2 TC=25 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 1 SavantIC Semiconductor Product Specification 2SD1445 2SD1445A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SD1445 MIN TYP. MAX UNIT 20 V IC=10mA IB=0 40 2SD1445A VCEsat Collector-emitter saturation voltage IC=10A ;IB=0.33A 0.6 V VBEsat Base-emitter saturation voltage IC=10A; IB=0.33A 1.5 V 50 µA 50 µA ICBO Collector cut-off current 2SD1445 VCB=40V; IE=0 2SD1445A VCB=50V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.1A ; VCE=2V 45 hFE-2 DC current gain IC=3A ; VCE=2V 90 Transition frequency IC=0.5A; VCE=10V,f=10MHz 120 MHz Collector output capacitance IE=0; f=1MHz ; VCB=10V 200 pF 0.3 µs 0.4 µs 0.1 µs fT COB 260 Switching times ton Trun-on time tstg Storage time tf IC=3A IB1=0.1A, IB2=-0.1A VCC=20V Fall time hFE-2 Classifications Q P 90-180 130-260 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1445 2SD1445A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 4 2SD1445 2SD1445A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 5 2SD1445 2SD1445A