SavantIC Semiconductor Product Specification 2SB1503 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SD2276 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification ·Optimum for 110W Hi-Fi output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -140 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -7 A ICM Collector current-peak -12 A PC Collector power dissipation TC=25 120 W Ta=25 3.5 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1503 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-7mA -2.5 V VBEsat Base-emitter saturation voltage IC=-7A ;IB=-7mA -3.0 V ICBO Collector cut-off current VCB=-160V; IE=0 -100 µA ICEO Collector cut-off current VCE=-140V; IB=0 -100 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 µA hFE-1 DC current gain IC=-1A ; VCE=-5V 2000 hFE-2 DC current gain IC=-7A ; VCE=-5V 5000 Transition frequency IC=-0.5A ; VCE=-10V;f=1MHz fT CONDITIONS MIN TYP. MAX -140 UNIT V 30000 20 MHz 1.0 µs 1.5 µs 1.2 µs Switching times ton Turn-on time ts Storage time tf Fall time IC=-7A ;IB1=-IB2=-7mA VCC=-50V hFE-2 classifications Q S P 5000-10000 7000-21000 8000-30000 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 2SB1503