SAVANTIC 2SD1565

SavantIC Semiconductor
Product Specification
2SD1565
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·High DC current gain
·DARLINGTON
·Complement type 2SB1087
APPLICATIONS
·For low frequency power amplifier
and power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
5
A
ICM
Collector current-peak
10
A
IB
Base current
0.5
A
PT
Total power dissipation
TC=25
30
Ta=25
1.5
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD1565
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=2mA
1.5
V
VBEsat
Base-emitter saturation voltage
IC=2A; IB=2mA
2.0
V
ICBO
Collector cut-off current
VCB=100V ;IE=0
1.0
µA
IEBO
Emitter cut-off current
VEB=7V; IC=0
5.0
mA
hFE-1
DC current gain
IC=2A ; VCE=2V
2000
hFE-2
DC current gain
IC=4A ; VCE=2V
500
100
UNIT
V
20000
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2A; IB1=-IB2=2mA
RL=25A; VCCB50V
hFE-1 classifications
M
L
K
2000-5000
4000-10000
8000-20000
2
1.0
µs
3.5
µs
1.2
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SD1565