ISC 2SB1103

Inchange Semiconductor
Product Specification
2SB1103
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220C package
・DARLINGTON
・High DC durrent gain
・Low collector saturation voltage
・Complement to type 2SD1603
APPLICATIONS
・Designed for use in low frequency
power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current-DC
-8
A
ICM
Collector current-peak
-12
A
PC
Collector power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SB1103
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA, RBE=∞
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-50mA, IC=0
-7
V
VCEsat-1
Collector-emitter saturation voltage
IC=-4A ,IB=-8mA
-1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=-8A ,IB=-80mA
-3.0
V
VBEsat-1
Base-emitter saturation voltage
IC=-4A ,IB=-8mA
-2.0
V
VBEsat-2
Base-emitter saturation voltage
IC=-8A ,IB=-80mA
-3.5
V
ICBO
Collector cut-off current
VCB=-60V, IE=0
-100
μA
ICEO
Collector cut-off current
VCE=-50V, RBE=∞
-10
μA
hFE
DC current gain
IC=-4A ; VCE=-3V
VD
Diode forward voltage
ID=8A
3.0
V
1000
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=-4A ,IB1=-IB2=-8mA
Fall time
2
0.5
μs
3.0
μs
1.0
μs
Inchange Semiconductor
Product Specification
2SB1103
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3