SavantIC Semiconductor Product Specification 2SD1435 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type 2SB1031 APPLICATIONS ·For low frequency power amplifier and high current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A ICM Collector current-Peak 20 A IB Base current 3 A PC Collector power dissipation 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD1435 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. VCEO(SUS) Collector-emitter sustaining voltage IC=1mA, RBE=> 100 V V(BR)EBO Emitter-base breakdown voltage IE=50mA, IC=0 7 V VCEsat-1 Collector-emitter saturation voltage IC=8A ,IB=16mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=15A ,IB=150mA 3.0 V VBEsat-1 Base-emitter saturation voltage IC=8A ,IB=16mA 2.5 V VBEsat-2 Base-emitter saturation voltage IC=15A ,IB=150mA 3.5 V ICBO Collector cut-off current VCB=100V, IE=0 100 µA ICEO Collector cut-off current VCE=80V, RBE=> 1.0 µA hFE DC current gain IC=8A ; VCE=3V 1000 MAX UNIT 20000 Switching times ton Turn-on time 2.0 µs 8.0 µs IC = 8 A,IB1 =-IB2 =16mA toff Turn-off time 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.1mm) 3 2SD1435