SAVANTIC 2SD1435

SavantIC Semiconductor
Product Specification
2SD1435
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·DARLINGTON
·High DC current gain
·Complement to type 2SB1031
APPLICATIONS
·For low frequency power amplifier and
high current switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
15
A
ICM
Collector current-Peak
20
A
IB
Base current
3
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD1435
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
VCEO(SUS)
Collector-emitter sustaining voltage
IC=1mA, RBE=>
100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=50mA, IC=0
7
V
VCEsat-1
Collector-emitter saturation voltage
IC=8A ,IB=16mA
2.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=15A ,IB=150mA
3.0
V
VBEsat-1
Base-emitter saturation voltage
IC=8A ,IB=16mA
2.5
V
VBEsat-2
Base-emitter saturation voltage
IC=15A ,IB=150mA
3.5
V
ICBO
Collector cut-off current
VCB=100V, IE=0
100
µA
ICEO
Collector cut-off current
VCE=80V, RBE=>
1.0
µA
hFE
DC current gain
IC=8A ; VCE=3V
1000
MAX
UNIT
20000
Switching times
ton
Turn-on time
2.0
µs
8.0
µs
IC = 8 A,IB1 =-IB2 =16mA
toff
Turn-off time
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.1mm)
3
2SD1435