SavantIC Semiconductor Product Specification 2SD1773 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1193 ·High speed switching APPLICATIONS ·For medium speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 8 A ICM Collector current-Peak 12 A PC Collector power dissipation Ta=25 2 TC=25 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1773 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=2A , L=10mH V(BR)EBO Emitter-base breakdown voltage IE=50mA ;IC=0 VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=8mA 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=8A ;IB=80mA 3.0 V VBEsat-1 Base-emitter saturation voltage IC=4A ;IB=8mA 2.0 V VBEsat-2 Base-emitter saturation voltage IC=8A ;IB=80mA 3.5 V ICBO Collector cut-off current VCB=120V ;IE=0 100 µA ICEO Collector cut-off current VCE=100V ;IB=0 10 µA hFE DC current gain IC=4A ; VCE=3V Transition frequency IC=0.5A ; VCE=10V,f=1MHz fT CONDITIONS MIN TYP. MAX UNIT 120 V 7 V 1000 20000 20 MHz 0.7 µs 6.0 µs 2.0 µs Switching times ton Turn-on time ts Storage time tf Fall time IC=4A ;IB1=8mA IB2=-8mA; VCC=50V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SD1773