SAVANTIC 2SD1773

SavantIC Semiconductor
Product Specification
2SD1773
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·DARLINGTON
·Complement to type 2SB1193
·High speed switching
APPLICATIONS
·For medium speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
120
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current (DC)
8
A
ICM
Collector current-Peak
12
A
PC
Collector power dissipation
Ta=25
2
TC=25
50
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD1773
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=2A , L=10mH
V(BR)EBO
Emitter-base breakdown voltage
IE=50mA ;IC=0
VCEsat-1
Collector-emitter saturation voltage
IC=4A ;IB=8mA
1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=8A ;IB=80mA
3.0
V
VBEsat-1
Base-emitter saturation voltage
IC=4A ;IB=8mA
2.0
V
VBEsat-2
Base-emitter saturation voltage
IC=8A ;IB=80mA
3.5
V
ICBO
Collector cut-off current
VCB=120V ;IE=0
100
µA
ICEO
Collector cut-off current
VCE=100V ;IB=0
10
µA
hFE
DC current gain
IC=4A ; VCE=3V
Transition frequency
IC=0.5A ; VCE=10V,f=1MHz
fT
CONDITIONS
MIN
TYP.
MAX
UNIT
120
V
7
V
1000
20000
20
MHz
0.7
µs
6.0
µs
2.0
µs
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=4A ;IB1=8mA
IB2=-8mA; VCC=50V
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
2SD1773