SavantIC Semiconductor Product Specification 2SD2399 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1568 ·High DC current gain. ·DARLINGTON APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V 4 A Single pulse 6 A TC=25 30 Ta=25 2 IC Collector current ICM Collector current-peak PC Collector dissipation W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD2399 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=50µA; IE=0 80 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 80 V VCEsat Collector-emitter saturation voltage IC=2A ; IB=4mA 1.5 V ICBO Collector cut-off current VCB=80V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V;IC=0 3.0 mA hFE DC current gain IC=2A ; VCE=3V COB Output capacitance IE=0 ; VCB=10V; f=1MHz 35 pF fT Transition frequency IE=-0.2A ; VCE=5V;f=10MHz 40 MHz 2 1000 10000 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD2399