SAVANTIC 2SB731

SavantIC Semiconductor
Product Specification
2SB731
Silicon PNP Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SD809
·Low collector saturation voltage
·
APPLICATIONS
·Audio frequency power amplifier
·Low speed switching
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current (DC)
-1
A
ICM
Collector current-Peak
-2
A
IB
Base current (DC)
-0.5
A
PT
Total power dissipation
Ta=25
1.0
TC=25
10
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB731
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEsat
Collector-emitter saturation voltage
IC=-1.0A; IB=-50mA
-0.5
-0.6
V
VBEsat
Base-emitter saturation voltage
IC=-1.0A; IB=-50mA
-1.0
-1.2
V
ICBO
Collector cut-off current
VCB=-50V; IE=0
-0.1
µA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-0.1
µA
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
135
hFE-2
DC current gain
IC=-1A ; VCE=-1V
40
Transition frequency
IC=-10mA ; VCE=-2V
75
MHz
Collector output capacitance
IE=0; f=1MHz ; VCB=-10V
25
pF
fT
COB
hFE-1 Classifications
L
K
F
E
135-270
200-400
300-480
360-600
2
600
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SB731