SavantIC Semiconductor Product Specification 2SB681 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -12 A ICM Collector current-peak -20 A PC Collector power dissipation 100 W Tj Junction temperature 150 Tstg Storage temperature -40~150 TC=25 SavantIC Semiconductor Product Specification 2SB681 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0 -150 V V(BR)CBO Collector-emitter breakdown voltage IC=-1mA ;IE=0 -150 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V Collector-emitter saturation voltage IC=-6A; IB=-0.6A -2.5 V VBE Base-emitter on voltage IC=-1A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-150V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 40 hFE-2 DC current gain IC=-5A ; VCE=-5V 20 Transition frequency IC=-1A ; VCE=-5V VCEsat fT CONDITIONS hFE-1 Classifications R O 40-80 70-140 2 MIN TYP. MAX UNIT 140 13 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SB681