Inchange Semiconductor Product Specification 2SB557 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SD427 ・High power dissipation APPLICATIONS ・Power amplifier applications ・Recommended for 50W high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector 导体 半 电 固 Fig.1 simplified outline (TO-3) and symbol D N O IC Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO PARAMETER R O T UC M E S GE VALUE UNIT Open emitter -120 V Collector-emitter voltage Open base -120 V Emitter-base voltage Open collector -5 V N A H INC Collector-base voltage CONDITIONS IC Collector current -8 A IE Emitter current 8 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB557 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-0.1A ;IB=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-10mA ;IC=0 -5 V Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.5 V VBE Base-emitter on voltage IC=-5A ; VCE=-5V -2.0 V ICBO Collector cut-off current VCB=-60V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE-1 DC current gain VCEsat hFE-2 导体 半 电 固 DC current gain COB Output capacitance fT Transition frequency CONDITIONS IC=-1A ; VCE=-5V 40 IC=-5A ; VCE=-5V 20 IE=0 ; VCB=-10V;f=1.0MHz IC=-1A ; VCE=-5V hFE-1 Classifications R O 40-80 70-140 2 TYP. MAX UNIT 140 R O T UC D N O IC M E S GE N A H INC MIN 280 pF 7 MHz Inchange Semiconductor Product Specification 2SB557 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3