Inchange Semiconductor Product Specification 2SD733 2SD733K Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SB697/697K ・High power dissipation APPLICATIONS ・Power amplifier applications ・Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2SD733 VCBO Collector-base voltage 140 Open base 2SD733K VEBO Emitter-base voltage V 180 2SD733 Collector-emitter voltage UNIT 160 Open emitter 2SD733K VCEO VALUE V 160 Open collector 6 V IC Collector current 12 A ICM Collector current-peak 20 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -40~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD733 2SD733K Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD733 V(BR)CEO V(BR)CBO Collector-emitter breakdown voltage VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT TYP. MAX IC=50mA ;IB=0 V 2SD733K 160 2SD733 160 Collector-emitter breakdown voltage UNIT 140 IC=5mA ;IE=0 2SD733K V(BR)EBO MIN V 180 Emitter-base breakdown voltage IE=5mA ;IC=0 Collector-emitter saturation voltage IC=6A; IB=0.6A 6 V 0.7 2.5 V R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Base-emitter on voltage IC=1A ; VCE=5V 1.5 V Collector cut-off current VCB=80V; IE=0 0.1 mA Emitter cut-off current VEB=4V; IC=0 0.1 mA DC current gain IC=1A ; VCE=-5V 40 DC current gain IC=5A ; VCE=5V 20 Transition frequency IC=1A ; VCE=5V hFE-1 Classifications C D E F 40-80 60-120 100-200 160-320 2 320 15 MHz Inchange Semiconductor Product Specification 2SD733 2SD733K Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3