SAVANTIC 2SD717

SavantIC Semiconductor
Product Specification
2SD717
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3P(I) package
·Low collector saturation voltage
·High collector power dissipation
APPLICATIONS
·High power switching applications
·DC-DC converter and DC-AC inverter
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
70
V
VCEO
Collector-emitter voltage
Open base
50
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
10
A
IB
Base current
2
A
PT
Total power dissipation
80
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD717
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ,IB=0
VCEsat
Collector-emitter saturation voltage
IC=6A; IB=0.3A
0.4
V
VBEsat
Base-emitter saturation voltage
IC=6A; IB=0.3A
1.2
V
ICBO
Collector cut-off current
VCB=70V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE-1
DC current gain
IC=1A ; VCE=1V
70
hFE-2
DC current gain
IC=6A ; VCE=1V
30
fT
Transition frequency
IC=1A ; VCE=4V
10
MHz
Cob
Output capacitance
IE=0 ; VCB=10V ;f=1MHz
350
pF
0.3
µs
2.5
µs
0.4
µs
50
UNIT
V
240
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IB1=-IB2=0.3A;RL=5A;VCC=30V
hFE-1 Classifications
O
Y
70-140
120-240
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SD717