SavantIC Semiconductor Product Specification 2SD717 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·Low collector saturation voltage ·High collector power dissipation APPLICATIONS ·High power switching applications ·DC-DC converter and DC-AC inverter applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 70 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A IB Base current 2 A PT Total power dissipation 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD717 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=50mA ,IB=0 VCEsat Collector-emitter saturation voltage IC=6A; IB=0.3A 0.4 V VBEsat Base-emitter saturation voltage IC=6A; IB=0.3A 1.2 V ICBO Collector cut-off current VCB=70V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=1A ; VCE=1V 70 hFE-2 DC current gain IC=6A ; VCE=1V 30 fT Transition frequency IC=1A ; VCE=4V 10 MHz Cob Output capacitance IE=0 ; VCB=10V ;f=1MHz 350 pF 0.3 µs 2.5 µs 0.4 µs 50 UNIT V 240 Switching times ton Turn-on time ts Storage time tf Fall time IB1=-IB2=0.3A;RL=5A;VCC=30V hFE-1 Classifications O Y 70-140 120-240 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SD717