SavantIC Semiconductor Product Specification 2SB880 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·DARLNGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SD1190 APPLICATIONS ·Motor drivers,printer hammer drivers,relay drivers,voltage regulators PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -4 A ICM Collector current-peak -6 A PC Collector power dissipation TC=25 30 Ta=25 1.75 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB880 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. V(BR)CEO Collector-emitter breakdown voltage IC=-50mA, RBE=> -60 V V(BR)CBO Collector-base breakdown voltage IC=-5mA ,IE=0 -70 V VCEsat Collector-emitter saturation voltage IC=-2A ,IB=-4mA VBEsat Base-emitter saturation voltage ICBO UNIT -1.5 V IC=-2A ,IB=-4mA -2.0 V Collector cut-off current VCB=-40V, IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -3.0 mA fT Transition frequency IC=-2A ; VCE=-5V DC current gain IC=-2A ; VCE=-2V hFE -1.0 MAX 20 2000 MHz 5000 Switching times ton Turn-on time tstg Storage time tf IC=-2A ;IB1=-IB2=-4mA VCC=-20V,RL=10D Fall time 2 0.5 µs 1.4 µs 1.2 µs SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB880