SAVANTIC 2SB880

SavantIC Semiconductor
Product Specification
2SB880
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220C package
·DARLNGTON
·High DC current gain
·Low collector saturation voltage
·Complement to type 2SD1190
APPLICATIONS
·Motor drivers,printer hammer drivers,relay
drivers,voltage regulators
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-70
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-4
A
ICM
Collector current-peak
-6
A
PC
Collector power dissipation
TC=25
30
Ta=25
1.75
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB880
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA, RBE=>
-60
V
V(BR)CBO
Collector-base breakdown voltage
IC=-5mA ,IE=0
-70
V
VCEsat
Collector-emitter saturation voltage
IC=-2A ,IB=-4mA
VBEsat
Base-emitter saturation voltage
ICBO
UNIT
-1.5
V
IC=-2A ,IB=-4mA
-2.0
V
Collector cut-off current
VCB=-40V, IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-3.0
mA
fT
Transition frequency
IC=-2A ; VCE=-5V
DC current gain
IC=-2A ; VCE=-2V
hFE
-1.0
MAX
20
2000
MHz
5000
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=-2A ;IB1=-IB2=-4mA
VCC=-20V,RL=10D
Fall time
2
0.5
µs
1.4
µs
1.2
µs
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SB880