ISC 2SD1229

Inchange Semiconductor
Product Specification
2SD1229
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·Complement to type 2SB912
·High DC current gain
·High current capacity and wide ASO
·Low saturation voltage
APPLICATIONS
·Motor drivers, printer hammer drivers,
relay drivers,voltage regulator control.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
70
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
10
A
ICM
Collector current-peak
15
A
PC
Collector power dissipation
TC=25℃
60
Ta=25℃
2.5
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD1229
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;RBE=∞
60
V
V(BR)CBO
Collector-base breakdown voltage
IC=5mA ;IE=0
70
V
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=10mA
1.5
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=10mA
2.0
V
ICBO
Collector cut-off current
VCB=40V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
3.0
mA
hFE
DC current gain
IC=5A ; VCE=2V
Transition frequency
IC=5A ; VCE=5V
fT
CONDITIONS
MIN
TYP.
MAX
UNIT
2000
20
MHz
0.6
μs
3.0
μs
1.8
μs
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=500IB1=-500IB2=5A
VCC=20V;RL=4Ω
Fall time
2
Inchange Semiconductor
Product Specification
2SD1229
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3