SAVANTIC 2SD2093

SavantIC Semiconductor
Product Specification
2SD2093
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PML package
·DARLINGTON
·Complement to type 2SB1388
·High DC current gain
·Low saturation voltage
·Large current capacity and large ASO
APPLICATIONS
·Motor drivers
·Printer hammer drivers
·Relay drivers,
·Voltage regulator control
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
110
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
10
A
ICM
Collector current-peak
15
A
PC
Collector power dissipation
TC=25
45
W
3.0
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD2093
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
0.9
1.5
V
2.0
V
VCEsat
Collector-emitter saturation voltage
IC=5A;IB=10m A
VBEsat
Base-emitter saturation voltage
IC=5A;IB=10m A
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA;IB=0
110
V
V(BR)CBO
Collector-base breakdown voltage
IC=50mA;RBE=>
100
V
IEBO
Emitter cut-off current
VEB=5V; IC=0
3.0
mA
ICBO
Collector cut-off current
VCB=80V; IE=0
0.1
mA
hFE
DC current gain
IC=5 A ; VCE=3V
Transition frequency
IC=5 A ; VCE=5V
fT
1500
4000
20
MHz
0.6
µs
4.8
µs
1.6
µs
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A IB1=-IB2=10mA
VCC=50V ,RL=10D
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SD2093