SAVANTIC 2SD1827

SavantIC Semiconductor
Product Specification
2SD1827
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
·Complement to type 2SB1225
·High DC current gain.
·Large current capacity and wide ASO.
·Low saturation voltage.
·DARLINGTON
APPLICATIONS
·Suitable for use in cotrol of motor drivers,
printer hammer drivers, relay drivers, and
constant-voltage regulators.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
70
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
10
A
ICM
Collector current-peak
15
A
PC
Collector dissipation
TC=25
30
W
2
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD1827
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=5mA; IE=0
70
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA; RBE=>
60
V
VCEsat
Collector-emitter saturation voltage
IC=5A ; IB=10mA
VBEsat
Base-emitter saturation voltage
ICBO
0.9
1.5
V
IC=5A ; IB=10mA
2.0
V
Collector cut-off current
VCB=40V;IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V;IC=0
3.0
mA
hFE
DC current gain
IC=5A ; VCE=2V
2000
5000
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A; IB1=0.01A
-IB2=0.01A
VCC=20V ,RL=4B
2
0.6
µs
3.0
µs
1.8
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SD1827